Highly uniform InGaN-based quantum dots (QDs) grown on a nanopatterned dielectric layer defined by self-assembled diblock copolymer were performed by metal-organic chemical vapor deposition. The cylindrical-shaped nanopatterns were created on SiNx layers deposited on a GaN template, which provided the nanopatterning for the epitaxy of ultra-high density QD with uniform size and distribution. Sc...

Related Articles Conical air prism arrays as an embedded reflector for high efficient InGaN/GaN light emitting diodes Appl. Phys. Lett. 102, 061114 (2013) Study on phosphor sedimentation effect in white light-emitting diode packages by modeling multi-layer phosphors with the modified Kubelka-Munk theory J. Appl. Phys. 113, 063108 (2013) Identifying the efficient inter-conversion between singlet...

Interface modification by inserting an ultrathin low-temperature GaN layer prior to the growth of high-temperature GaN barriers followed by an annealing process was employed to improve the properties of the InGaN/GaN quantum wells. By detailed studies and comparisons of the surface morphology, photoluminescence and the surface compositions of the InGaN/GaN quantum wells at different growth stag...

This paper reports the transient photoluminescence (PL) properties of an InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) with green emission. Recombination of localized excitons was proved to be the main microscopic mechanism of green emission in the sample. The PL dynamics were ascribed to two pathways of the exciton recombination, corresponding to the fast decay and the slow ...

This Tutorial teaches the essential development of nitrogen-plasma-assisted molecular-beam-epitaxy grown InGaN nanowires as an application-inspired platform for energy harvesting and conversion applications by growing dislocation- strain-relieved axial InGaN-based nanowires. The aims to shed light on interfacial, surface, electrical, photoelectrochemical characteristics through nanoscale ultraf...

This paper introduces modeling and simulation of the noise properties of the blue-violet InGaN laser diodes. The noise is described in terms of the spectral properties of the relative intensity noise (RIN). We examine the validity of the present noise modeling by comparing the simulated results with the experimental measurements available in literature. We also compare the obtained noise result...

In spite of the theoretical advantages associated with nitride microcavities, the quality factors of devices with embedded indium gallium nitride (InGaN) or gallium nitride (GaN) optical emitters still remain low. In this work we identify threading dislocations (TDs) as a major limitation to the fabrication of high quality factor devices in the nitrides. We report on the use of cathodoluminesce...

Since 1993, InGaN light-emitting diodes (LEDs) have been improved and commercialized, but these devices have not fulfilled their original promise as solid-state replacements for light bulbs as their light-emission efficiencies have been limited. Here we describe a method to enhance this efficiency through the energy transfer between quantum wells (QWs) and surface plasmons (SPs). SPs can increa...

This paper presents a novel and mass-producible technique to fabricate indium-tin-oxide (ITO) nanorods which serve as an omnidirectional transparent conductive layer (TCL) for InGaN/GaN light emitting diodes (LEDs). The characteristic nanorods, prepared by oblique electron-beam evaporation in a nitrogen ambient, demonstrate high optical transmittance (T>90%) for the wavelength range of 450nm to...

In this work, the variation of the optical gain in the InGaN/GaN quantum well after thermal annealing is simulated. The potential profile change of the quantum well resulting from the interdiffusion of Ga and In atoms across the interface of the well and the barrier during the thermal treatments is assumed to follow Fick s law. The results show that the thermal annealing can induce an increase ...