The oxidation of anionand cation-rich indium phosphide ~001! has been investigated by exposure to unexcited molecular oxygen. Indium phosphide oxidation is an activated process and strongly structure sensitive. The In-rich d(234) surface reacts with oxygen at 300 K and above. Core level x-ray photoemission spectra have revealed that the O2 dissociatively chemisorbs onto the d(234), inserting in...

A series of (±)- and (R,R)-tridentate diamino, ortho/para disubstituted phenolate proligands H(NNO(R)) with various phenolate substituents was synthesized and used to prepare indium dichloride complexes (NNO(R))InCl2via salt metathesis of the deprotonated ligands with indium trichloride. These complexes are dinuclear in the solid state, in contrast to previously reported complexes with t-butyl ...

Indium(III) sulfide has recently attracted much attention due to its potential in optical sensors as a photoconducting material and in photovoltaic applications as a wide band gap material. On the other hand, optical absorption properties are key parameters in developing photosensitive photodetectors and efficient solar cells. In this work, we show that indium sulfide nanorod arrays produced by...

Detailed electron transport analysis is performed for an ensemble of conical indium phosphide nanowires bridging two hydrogenated n(+)-silicon electrodes. The current-voltage (I-V) characteristics exhibit a Coulomb staircase in the dark with a period of ∼ 1 V at room temperature. The staircase is found to disappear under light illumination. This observation can be explained by assuming the pres...

Among the various two-dimensional semiconductors, indium selenide has recently triggered the interest of scientific community, due to its band gap matching the visible region of the electromagnetic spectrum, with subsequent potential applications in optoelectronics and especially in photodetection. In this feature article, we discuss the main issues in the synthesis, the ambient stability and t...

There is considerable disagreement as to whether oxine or tropolone is the best labeling agent for indium leukocytes. We have previously looked at the sensitivity of oxine-labeled 111In leukocyte scans for occult infections and now present a similar group of patients imaged with tropolone-labeled 111In leukocytes. Thirty-four patients (38 studies) with possible occult infection were prospective...

Centre for Advanced Photonics and Electronics (CAPE), Electrical Engineering Division, University of Cambridge, Cambridge CB3 0FA, UK Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, UK Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK Department of Electronic and Electrical Engineering, University of Shef...

Although the demand for high-speed telecommunications has increased in recent years, the performance of transistors fabricated with traditional semiconductors such as silicon, gallium arsenide, and gallium nitride have reached their physical performance limits. Therefore, new materials with high carrier velocities should be sought for the fabrication of next-generation, ultra-high-speed transis...

Any device exposed to ambient conditions will be prone to oxidation. This may be of particular importance for semiconductor nanowires because of the high surface-to-volume ratio and only little is known about the consequences of oxidation for these systems. Here, we study the properties of indium arsenide nanowires which were locally oxidized using a focused laser beam. Polarization dependent m...

PURPOSE The present study aims at developing and evaluating an urea-based prostate specific membrane antigen (PSMA) inhibitor suitable for labeling with 111In for SPECT and intraoperative applications as well as 68Ga and 64Cu for PET imaging. METHODS The PSMA-based inhibitor-lysine-urea-glutamate-coupled to the spacer Phe-Phe-D-Lys(suberoyl) and functionalized with the enantiomerically pure p...