We demonstrate a new, versatile class of nanoscale chemical sensors based on single-stranded DNA (ss-DNA) as the chemical recognition site and single-walled carbon nanotube field effect transistors (swCN-FETs) as the electronic read-out component. swCN-FETs with a nanoscale coating of ss-DNA respond to gas odors that do not cause a detectable conductivity change in bare devices. Responses of ss...

We report here the first degenerate n-doping of few-layer MoS2 and WSe2 semiconductors by surface charge transfer using potassium. High-electron sheet densities of ~1.0 × 10(13) cm(-2) and 2.5 × 10(12) cm(-2) for MoS2 and WSe2 are obtained, respectively. In addition, top-gated WSe2 and MoS2 n-FETs with selective K doping at the metal source/drain contacts are fabricated and shown to exhibit low...

A new aminoglycoside antibiotic, S-11-A, was isolated from the fermentation broth of the 2-deoxystreptamine negative (DOS-) mutant of Bacillus circulans S-11. The structure of S-11-A was elucidated as 1-deamino-1-hydroxyxylostasin, which contains an intermediate of DOS biosynthesis (S-11-P) and has resistance to some aminoglycoside-inactivating enzymes. This is the first finding of antibiotic p...

The extraordinary electronic properties along with excellent optical, mechanical, thermodynamic properties have led to a lot of interest in its possible applications. Due to zero band gap in large area Graphene, its usability as channel material in MOSFETs has been limited. This paper presents the basic physics of Graphene and describes a few methods used by researchers to create band gaps in G...

We proposed a new strategy to increase the photoresponsivity of silicon NW field-effect transistors (FETs) by integrating CdSe quantum dots (QDs) using protein shells (PSs). CdSe QDs were synthesized using ClpP, a bacterial protease, as protein shells to control the size and stability of QD and to facilitate the mounting of QDs on SiNWs. The photocurrent of SiNW-FETs in response to light at a w...

The attachment of an antibody to an antigen-coated cantilever has been investigated by repeated experiments, using a cantilever-based detection system by Cantion A/S. The stress induced by the binding of a pesticide residue BAM (2,6 dichlorobenzamide) immobilized on a cantilever surface to anti-BAM antibody is measured using the CantiLab4© system from Cantion A/S with four gold-coated cantileve...

For the first time, we fabricated p-type FETs using an individual heavily Al-doped α-Si3N4 NW with a single-crystal structure. The results show that despite a heavy Al-doping level, a typical device still exhibits high performance with an extremely high on/off ratio, 10(3), at Vds = -5 V.

The failure and degradation mechanisms of gate-all-around silicon nanowire FET subjected to electrostatic discharge (ESD) are investigated through device modeling. Transmission line pulse stress test is simulated and device degradation physics is modeled. The device degradation level, interface state concentration and hard breakdown are shown and analyzed. From the model, we found that ESD stre...

Pharmaceutical industry represents a range of industries with operation and processes as diverse as its product. Hence effluents coming from pharma industries vary from industry to industry. Thus it is almost impossible to describe a typical pharmaceutical effluent because of such diversity. Waste water is generally evaluated in terms of temp, pH, Total suspended solid (TSS), BOD, COD, Oil & gr...

Semiconductor nanowires have been explored as alternative electronic materials for high performance device applications exhibiting low power consumption specs. Electrical transport in III-V nanowire (NW) field-effect transistors (FETs) is frequently governed by Schottky barriers between the source/drain and the NW channel. Consequently the device performance is greatly impacted by the contacts....