Nanostructure (NS) InGaN crystals were grown on carbon nanotubes (CNTs) using metalorganic chemical vapor deposition. The NS-InGaN crystals, grown on a ~5-μm-long CNT/Si template, were estimated to be ~100-270 nm in size. Transmission electron microscope examinations revealed that single-crystalline InGaN NSs were formed with different crystal facets. The observed green (~500 nm) cathodolumines...

Indium Phosphide Quantum Dots (InP QDs) have emerged as an alternative to toxic metal ion based QDs in nanobiotechnology. The ability to generate cationic surface charge, without compromising stability and biocompatibility, is essential in realizing the full potential of InP QDs in biological applications. We have addressed this challenge by developing a place exchange protocol for the preparat...

Adsorption of phosphine on indium phosphide compound semiconductor surfaces is a key process during the chemical vapor deposition of this material. Recent experimental infrared studies of the In-rich InP surfaces exposed to phosphine show a complex vibrational pattern in the P-H stretch region, presumably due to overlapping contributions from several structural species. We have performed densit...

Heterojunction system has been proved as one of the best architectures for photocatalyst owing to extending specific surface area, expanding spectral response range, and increasing photoinduced charges generation, separation, and transmission, which can provide better light absorption range and higher reaction site. In this paper, Indium Sulfide/Flexible Electrospun Carbon Nanofiber (In2S3/CNF)...

The electronic transport properties of single layer graphene having a dilute coating of indium adatoms has been investigated. Our studies establish that isolated indium atoms donate electrons to graphene and become a source of charged impurity scattering, affecting the conductivity as well as magnetotransport properties of the pristine graphene. Notably, a positive magnetoresistance is observed...

Using metamaterial absorbers, we have shown that metallic layers in the absorbers do not necessarily constitute undesired resistive heating problem for photovoltaics. Tailoring the geometric skin depth of metals and employing the natural bulk absorbance characteristics of the semiconductors in those absorbers can enable the exchange of undesired resistive losses with the useful optical absorban...

Electron transport is discussed for an ensemble of fused conical indium phosphide nanowires bridging two hydrogenated n-silicon electrodes. The current-voltage (Id-Vd) characteristics exhibit a Coulomb staircase in dark with a period of ~ 1 V but it disappears under light illumination in some devices, while Id-Vd is featureless smooth monotonic curve in other devices. It is shown that transport...

The responsivity of two optical detectors was determined by the method of direct substitution in four different NIST measurement facilities. The measurements were intended to demonstrate the determination of absolute responsivity as provided by NIST calibration services at laser and optical-communication wavelengths; nominally 633 nm, 850 nm, 1060 nm, 1310 nm, and 1550 nm. The optical detectors...

With the advance of mature fabrication technologies, photonic integrated circuits (PICs) reach ever-higher levels of complexity. Integration of thousands of components has been shown [1], with each main technology showing an exponential growth in complexity [2]. This increase in complexity requires a convergence in technologies, and the roadmaps are currently being pushed by silicon nitride, (h...

Improvement in secure transmission of information is an urgent need for governments, corporations and individuals. Quantum key distribution (QKD) promises security based on the laws of physics and has rapidly grown from proof-of-concept to robust demonstrations and deployment of commercial systems. Despite these advances, QKD has not been widely adopted, and large-scale deployment will likely r...