We report a new InP/GaAsSb double heterojunction bipolar transistor (DHBT) emitter fin architecture with record ${f}_{\mathrm {MAX}} =1.2$ THz, simultaneous {T}} =475$ GHz, and notation="LaTeX">$BV_{\mathrm {CEO}} =5.4$ V. The resulti...

A bipolar transistor structure is proposed having application for either high frequency operation or integration with certain types of light emitting devices. The structure involves liquid phase epitaxially grown layers of GaAs for the collector and base regions, and of Ga,_,Al,As for the heterojunction emitter. The high frequency potential of this device results primarily from the high electro...

A bandgap reference (BGR) and sub1V BGR circuits for Picowatt LSIs is proposed here. The circuits pertains pico-ampere current reference circuit, a bipolar transistor, and proportional-to-absolute-temperature (PTAT) voltage generators. The circuits neglect resistors and contain only MOSFETs and one bipolar transistor. As the sub-BGR circuit divides the output voltage of the bipolar transistor ...

A new bipolar transistor model called VBIC has recently been developed and is likely to replace the Gummel–Poon model as the new industry standard bipolar transistor model. This paper focuses on the comparison of the VBIC and Gummel–Poon models under the dc operations. The extraction and optimization procedure coded in S+ statistical language and required for VBIC simulation is also developed a...

|The steady state drift-diiusion model for the ow of electrons and holes in semiconductors is sim-pliied by perturbation techniques. The simpliications amount to assuming zero space charge and low injection. The limiting problems are solved and explicit formulas for the voltage-current characteristics of bipolar devices can be obtained. As examples, the pn-diode, the bipolar transistor and the ...

The two port network method has been employed in the case of bipolar transistor high frequency amplifier design with excellent results.1, 2, 3, 4, 5 Gain, device terminal admittances, and stability are all exact computations free of approximations. Fortunately, the theory and design equations currently being used for bipolar amplifiers are fully applicable to FET’s. This is due to one of the ma...

A heterojunction Mott field effect transistor (FET) is proposed that consists of an epitaxial channel material that exhibits an electron correlation induced Mott metal-to-insulator transition. The Mott material is remotely (modulation) doped with a degenerately doped conventional band insulator. An applied voltage modulates the electron transfer from the doped band insulator to the Mott materia...