HF radar systems are widely and routinely used for the measurement of ocean surface currents and waves. Analysis methods presently in use are based on the assumption of infinite water depth, and may therefore be inadequate close to shore where the radar echo is strongest. In this paper, we treat the situation when the radar echo is returned from ocean waves that interact with the ocean floor. S...

BACKGROUND There is a growing trend of inactivity among children, which may not only result in poorer physical health but also poorer cognitive health. The purpose of this study was to investigate the relationship between aerobic fitness and proactive and reactive cognitive control using a continuous performance task (CPT). METHODS Forty-eight 9- to 10-year-old children (n = 24 higher fit [HF...

Article history: Available online xxxx a b s t r a c t Negative bias temperature instability (NBTI) has become an important reliability concern for nano-scaled complementary metal oxide (CMOS) devices. This paper presents the effect of NBTI for a 45 nm advanced-process high-k dielectric with metal gate PMOS transistor. The device had incorporated advanced-process flow steps such as stress engin...

Metal-assisted chemical etching (MaCE) of a (100) n-type GaP using patterned Pd catalysts in a mixed solution of HF and H2O2 at room temperature is reported for the first time. Various patterns of Pd catalysts, i.e., meshes and patches, with length scales ranging from 200 nm to several μm were used. Depending on the sizes of the Pd catalysts, GaP exhibits two distinctively different MaCE mechan...

Hafnium oxide (HfO2) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO2 ...

Nanocrystalline hafnium oxide (HfO2) thin films have been produced under variable reactive oxygen (O2) fractionation (Г) employing Hf metal for reactive sputter-deposition. The effect of Г on the HfO2 compound formation, structure, morphology and optical properties has been evaluated. Without oxygen, the films of hexagonal phase of Hf metal were grown. Films grown at different O2 pressure are n...

We present a simulation study on negative bias temperature instability (NBTI) induced hole trapping in E' center defects, which leads to depassivation of interface trap precursor in different geometrical structures of high-k PMOSFET gate stacks using the two-stage NBTI model. The resulting degradation is characterized based on the time evolution of the interface and hole trap densities, as well...

Oxygen-related point defects can provide fixed charge or act as charge trapping centers in high-k gate stacks and, therefore, their origins and properties are of great interest. In this paper, reported experimental and theoretical results related to oxygen defects in HfO2 gate dielectrics are reviewed critically to assess the relative importance of different defect species in terms of their ele...