We report on bifurcate reactions on the surface of well-aligned Si(1-x)Ge(x) nanowires that enable fabrication of two different coaxial heterostructure nanowires. The Si(1-x)Ge(x) nanowires were grown in a chemical vapor transport process using SiCl(4) gas and Ge powder as a source. After the growth of nanowires, SiCl(4) flow was terminated while O(2) gas flow was introduced under vacuum. On th...

The Pb-assisted growth of Ge nanowires (NWs) has been investigated under high and low pressure conditions via thermal decomposition of diphenylgermane. Highly crystalline Ge NWs were obtained and Pb was established as a viable growth promoter with the Pb particle being in the solid and liquid state. & 2016 Elsevier B.V. All rights reserved.

The origin of the ballistic hole gas recently observed in Ge/Si core-shell nanowires has not been clearly resolved yet, although it is thought to be the result of the band offset at the radial interface. Here we perform spin-polarized density-functional calculations to investigate the defect levels of surface dangling bonds and Au impurities in the Si shell. Without any doping strategy, we find...

High yields of single-crystalline Ge nanowires (NWs) were synthesised in the vapour phase of a high boiling point organic solvent without the need for metal catalyst particles. High density, perpendicular arrays of Ge NWs were subsequently grown from ITO coated substrates. The approach represents a convenient route toward orientated arrays of catalyst-free Ge NWs.

The step-flow growth mode is used to fabricate Si and Ge nanowires with a width of 3.5 nm and a thickness of one atomic layer (0.3 nm) by self-assembly. Alternating deposition of Ge and Si results in the formation of a nanowire superlattice covering the whole surface. One atomic layer of Bi terminating the surface is used to distinguish between the elements Si and Ge. A difference in apparent h...

Conductance quantization at room temperature is a key requirement for the utilizing of ballistic transport for, e.g., high-performance, low-power dissipating transistors operating at the upper limit of "on"-state conductance or multivalued logic gates. So far, studying conductance quantization has been restricted to high-mobility materials at ultralow temperatures and requires sophisticated nan...

We present electronic transport measurements in individual Au-catalyst/Ge-nanowire interfaces demonstrating the presence of a Schottky barrier. Surprisingly, the small-bias conductance density increases with decreasing diameter. Theoretical calculations suggest that this effect arises because electron-hole recombination in the depletion region is the dominant charge transport mechanism, with a ...

the effect of length variation on the magnetic properties of nife alloy nanowires electrodeposited into the alumina template was investigated. the diameter (45±2.5 nm) and length (~ 1.9, 7.12, 8.3, 9.5 and 13.3 µm) of the nanowires were estimated from scanning electron microscopy images. energy dispersive spectroscopy results showed ni3fe7 composition of the alloy nanowires.  the magnetic prope...

Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2* 0.18 μs exceeds corresponding measurements in III–V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential...

The ability of core-shell nanowires to overcome existing limitations of heterostructures is one of the key ingredients for the design of next generation devices. This requires a detailed understanding of the mechanism for strain relaxation in these systems in order to eliminate strain-induced defect formation and thus to boost important electronic properties such as carrier mobility. Here we de...