Positron annihilation spectroscopy was applied to study relaxed P-doped n-type and undoped Si1−xGex layers with x up to 0.30. The as-grown SiGe layers were found to be defect free and annihilation parameters in a random SiGe alloy could be represented as superpositions of annihilations in bulk Si and Ge. A 2 MeV proton irradiation with a 1.6 1015 cm−2 fluence was used to produce saturated posit...

We investigate the ability of high spatial resolution (∼120 μm) Ge-doped SiO2 TL dosimeters to measure photoelectron dose enhancement resulting from the use of a moderate to high-Z target (an iodinated contrast media) irradiated by 90 kVp X-rays. We imagine its application in a novel radiation synovectomy technique, modelled by a phantom containing a reservoir of I2 molecules at the interface o...

The spectral Matthiessen’s rule is commonly used to calculate the total phonon scattering rate when multiple scattering mechanisms exist. Here we predict the spectral phonon relaxation time τ of defective bulk silicon using normal mode analysis based on molecular dynamics and show that the spectral Matthiessen’s rule is not accurate due to the neglect of the coupling between anharmonic phonon-p...

The device and circuit performance of a 20 nm gate length InGaAs and Ge hybrid CMOS based on an implant free quantum well (QW) device architecture is studied using a multiscale approach combining ensemble Monte Carlo simulation, drift-diffusion simulation, compact modelling, and TCAD mixedmode circuit simulation. We have found that the QW and doped substrate, used in the hybrid CMOS, help to re...

Flexible electrochemical energy storage devices have attracted extensive attention as promising power sources for the ever-growing field of flexible and wearable electronic products. However, the rational design of a novel electrode structure with a good flexibility, high capacity, fast charge-discharge rate and long cycling lifetimes remains a long-standing challenge for developing next-genera...

We present a combined experimental and theoretical study of ruthenium doped germanium clusters, RuGen(-) (n = 3-12), and their corresponding neutral species. Photoelectron spectra of RuGen(-) clusters are measured at 266 nm. The vertical detachment energies (VDEs) and adiabatic detachment energies (ADEs) are obtained. Unbiased CALYPSO structure searches confirm the low-lying structures of anion...

Previously, it has been reported that PMOS capacitors with heavily boron-doped polycrystalline SiGeC gates are less susceptible to boron penetration than those with poly Si gates [1]. Boron appears to accumulate in the poly SiGeC layers during anneals, reducing boron outdiffusion from the gate despite high boron levels in the poly SiGeC at the gate/oxide interface. In this abstract, we report c...

The development of an efficient silicon based light emitting device is the challenge task in modern semiconductor physics. One of the promising approach is to utilize a concept of Ge nanostructures embedded in a Si matrix. Our research is devoted to the investigation of structural, optical and electrooptical properties of the multilayer Ge/Si heterostructures selectively doped by Sb. The struct...

2014 In this paper, the experimental results describing the substrate bias effect on the Schottky gate capacitance-voltage and the DC current-voltage characteristics of GaAs FET’s (N-type epilayer on semi-insulating Cr-doped substrate) are reported. These results are accounted for by the formation of a double space-charge in the N-layer and in the S.I. substrate in the vicinity of the interface...

Recent results of research passive and active optical waveguides made high-purity chalcogenide glasses for middle infrared fiberoptic evanescent wave spectroscopy liquid gaseous substances are presented. On the basis selenide telluride glass fibers, novel types highly sensitive fiber probes developed. Pr(3+)- Tb(3+)-doped Ga(In)-Ge-As-Se Ga-Ge-Sb-Se 4.2–6 μm wavelength radiation sources created...