Lithium-ion batteries using germanium as the anode material are attracting attention because of their high-capacity, higher conductivity, and lithium-ion diffusivity relative to silicon. Despite recent studies on Ge electrode reactions, there is still limited understanding of the reaction mechanisms governing crystalline Ge and the transformations into intermediate amorphous phases that form du...

Herpes simplex virus type I (HSV-1) virions and HSV-1-infected cells bind to human immunoglobulin G (hIgG) via its Fc region. A complex of two surface glycoproteins encoded by HSV-1, gE and gI, is responsible for Fc binding. We have co-expressed soluble truncated forms of gE and gI in Chinese hamster ovary cells. Soluble gE-gI complexes can be purified from transfected cell supernatants using a...

Three quinary polar intermetallic compounds in the (Eu(1-x)Ca(x))9In8(Ge(1-y)Sn(y))8 (x = 0.66, y = 0.03) and the (Eu(1-x)Ca(x))3In(Ge(3-y)Sn(1+y)) (x = 0.66, 0.68; y = 0.13, 0.27) phases have been synthesized using the molten In-metal flux method, and the crystal structures are characterized by powder and single-crystal X-ray diffractions. Two orthorhombic structural types can be viewed as an ...

One of the greatest challenges facing the communications industry today is the necessity for bandwidth expansion in the network’s core. In the past, the driving force behind growing bandwidth demand was the Internet data explosion. Today, the driving force is video and the Internet traffic pushing that video, whether it is from the consumer side with video-content providers such as YouTube or H...

2014 Gamma-gamma coincidence measurements were carried out on the decay of 132I with two Ge(Li) detectors and a two parameter system. Several new transitions were observed. From these results, 18 new levels at 2 167.3, 2 187.4, 2 303.6, 2 916.9, 2 935.6, 2 959.1, 3 076.4, 3 112.1,3 122.3,3 155.4, 3 192.8, 3 214.3, 3 226.8, 3 237.4, 3 260.0, 3 319.6, 3 354.0, and 3 385.1 keV were placed in the 1...

Using first-principles total-energy calculations, we have investigated the adsorption and diffusion of Si and Ge adatoms on Ge/ Si(001)-(2 · 8) and Ge/Si(105)-(1 · 2) surfaces. The dimer vacancy lines on Ge/Si(001)-(2 · 8) and the alternate SA and rebonded SB steps on Ge/Si(105)-(1 · 2) are found to strongly influence the adatom kinetics. On Ge/Si(001)-(2 · 8) surface, the fast diffusion path i...

Si,Ge, strained layer superlattice (SLS) structures were grown by molecular beam epitaxy on Ge$ii --x buffer layers on (100) Si substrates to determine the effects of buffer layer composition, SLS thickness ratio, and superlattice periodicity, on the overall quality of these structures. X-ray diffraction methods were used to determine how closely actual periodicities and compositions met target...