نتایج جستجو برای: gate

تعداد نتایج: 42907  

2013
Xiaolong Su Shuhong Hao Xiaowei Deng Lingyu Ma Meihong Wang Xiaojun Jia Changde Xie Kunchi Peng

Measurement-based one-way quantum computation using cluster states as resources provides an efficient model to perform computation and information processing of quantum codes. Arbitrary Gaussian quantum computation can be implemented sufficiently by long single-mode and two-mode gate sequences. However, continuous variable gate sequences have not been realized so far due to an absence of cluste...

Nowadays there are different kinds of attacks on Field Programmable Gate Array (FPGA). As FPGAs are used in many different applications, its security becomes an important concern, especially in Internet of Things (IoT) applications. Hardware Trojan Horse (HTH) insertion is one of the major security threats that can be implemented in unused space of the FPGA. This unused space is unavoidable to ...

Abstract: We present the optimization of the manufacturing process of the 5nm bulk-FinFET technology by using the 3D process and device simulations. In this paper, bysimulating the manufacturing processes, we focus on optimizing the manufacturingprocess to improve the drive current of the 5nm FinFET. The improvement of drivecurrent is one of the most important issues in ...

Accurate delay calculation of circuit gates is very important in timing analysis of digital circuits. Waveform shapes on the input ports of logic gates should be considered, in the characterization phase of delay calculation, to obtain accurate gate delay values. Glitches and their temporal effect on circuit gate delays should be taken into account for this purpose. However, the explosive numbe...

2014
Belén Martínez-García Xavier Fernández Ofelia Díaz-Ingelmo Antonio Rodríguez-Campos Chaysavanh Manichanh Joaquim Roca

By transporting one DNA double helix (T-segment) through a double-strand break in another (G-segment), topoisomerase II reduces fractions of DNA catenanes, knots and supercoils to below equilibrium values. How DNA segments are selected to simplify the equilibrium DNA topology is enigmatic, and the biological relevance of this activity is unclear. Here we examined the transit of the T-segment ac...

Journal: :The Journal of the Acoustical Society of America 2004
Michael L Oelze William D O'Brien

Backscattered rf signals used to construct conventional ultrasound B-mode images contain frequency-dependent information that can be examined through the backscattered power spectrum. The backscattered power spectrum is found by taking the magnitude squared of the Fourier transform of a gated time segment corresponding to a region in the scattering volume. When a time segment is gated, the edge...

2009
Jianfeng Wang John F. Shortle Juan Wang Lance Sherry

Airport gates are one of the congestion points of the air transportation system. When an arriving flight lands on a runway, it is possible that it cannot pull into its gate. We define this phenomenon as gate-waiting delay. This paper analyzes the degree to which gate waiting is a problem and the functional causes of gate waiting. Analysis of flight performance data for the OEP 35 airports for t...

2011
Sang-Jin Cho In-Seob Bae Young Gug. Seol Nae-Eung Lee Yong Seob Park Jin-Hyo Boo

The effects of gate dielectrics material in organic thin film transistors (OTFTs) were investigated. The gate dielectrics were deposited by plasma enhanced chemical vapor deposition (PECVD) with cyclohexane and tetraethylorthosilane (TEOS) respectively used as organic and inorganic precursors. The gate dielectrics (gate insulators) were deposited as either organic plasma-polymer or organic–inor...

2003
Daewon Ha Qiang Lu Hideki Takeuchi Tsu-Jae King Katsunori Onishi Young-Hee Kim Jack C. Lee

To facilitate CMOS scaling beyond the 65 nm technology node, high-permittivity gate dielectrics such as HfO2 will be needed in order to achieve sub-1.3nm equivalent oxide thickness (EOT) with suitably low gate leakage, particularly for low-power applications. Polycrystalline silicongermanium (poly-SiGe) is a promising gate material because it is compatible with a conventional CMOS process flow,...

2010
Cheng-Li Lin Wen-Kuan Yeh

This study investigates the effects of oxide traps induced by SOI of various thicknesses (TSOI = 50, 70 and 90 nm) on the device performance and gate oxide TDDB reliability of Ni fully silicide metal-gate strained SOI MOSFETs capped with different stressed SiN contact-etch-stop-layer (CESL). The effects of different stress CESLs on the gate leakage currents of the SOI MOSFET devices are also in...

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