The results of basic ammonothermal crystallization gallium nitride are described. material is mainly analyzed in terms the formation stress (called stress-induced polarization effect) and defects (threading dislocations) appearing due to a relaxation process. Gallium grown different positions zone examined cross-polarized light. Interfaces between native seeds new-grown layers investigated ultr...

Monolithic phosphor-free two-color gallium nitride (GaN)-based white light emitting diodes (LED) have the potential to replace current phosphor-based GaN white LEDs due to their low cost and long life cycle. Unfortunately, the growth of high indium content indium gallium nitride (InGaN)/GaN quantum dot and reported LED's color rendering index (CRI) are still problematic. Here, we use flip-chip ...

Gallium nitride (GaN) nanopowder used as a blue fluorescent material was synthesized by using a direct current (DC) non-transferred arc plasma. Gallium nitrate hydrate (Ga(NO₃)₃∙xH₂O) was used as a raw material and NH₃ gas was used as a nitridation source. Additionally, melamine (C₃H₆N₆) powder was injected into the plasma flame to prevent the oxidation of gallium to gallium oxide (Ga₂O₃). Argo...

In this paper, a methodology is proposed for studying the current collapse effects of Gallium Nitride (GaN) power diodes and consequences on dynamic on-resistance (RON). Indeed, growing interest GaN based, high frequency conversion requires an accurate characterization deep understanding device’s behaviour before any development converters. This study can ultimately be used to model observed tr...

This paper presents a hybrid model–based control algorithm that combines Model Predictive Control (MPC) and Sequential Action Control (SAC) deployed in a high-speed drive for Brushless DC (BLDC) motor by using a DC-DC converter with Gallium Nitride (GaN) switches. GaN FETs are selected because of their higher speed and lower power loss as compared with traditional Si switches. In the proposed f...

Lattice constants of single phase gallium nitride were measured from room temperature to 1273 IS using high temperature x-ray powder diffraction. The data were used to calculate the epitaxial misfits using the epitaxial relationships, GaN(OOOl)]]A.1203(OO01) and GaN[10i0]]]A120s[1 1201 and GaN(OOOl#iH-SiC(OOO1) and GaN[lOiO]]]6H-SiC[lOiO], reported in the literature. Using the above relationshi...

The thermal management challenge posed by gallium nitride (GaN) high-electron-mobility transistor (HEMT) technology has received much attention in the past decade. The peak amplification power density of these devices is limited by heat transfer at the device, substrate, package, and system levels. Thermal resistances within micrometers of the transistor junction can limit efficient heat spread...

Power electronics belongs to the future key technologies in order to increase system efficiency as well as performance in automotive and energy saving applications. Silicon is the major material for electronic switches since decades. Advanced fabrication processes and sophisticated electronic device designs have optimized the silicon electronic device performance almost to their theoretical lim...