نتایج جستجو برای: gallium arsenide gaas
تعداد نتایج: 23751 فیلتر نتایج به سال:
1.1.3 Chemical and physical properties of the pure substance (a) Description: Grey, cubic crystals (Lide, 2003) (b) Melting-point: 1238 °C (Lide, 2003) (c) Density: 5.3176 g/cm (Lide, 2003) (d) Solubility: Insoluble in water (Wafer Technology Ltd, 1997); slightly soluble in 0.1 M phosphate buffer at pH 7.4 (Webb et al., 1984) (e) Stability: Decomposes with evolution of arsenic vapour at tempera...
After two decades since the discovery of ferromagnetism in manganese-doped gallium arsenide, its origin is still debated, and many doubts are related to the electronic structure. Here we report an experimental and theoretical study of the valence electron spectrum of manganese-doped gallium arsenide. The experimental data are obtained through the differences between off- and on-resonance photo ...
Today's consumer electronics, such as cell phones, tablets and other portable electronic devices, are typically made of non-renewable, non-biodegradable, and sometimes potentially toxic (for example, gallium arsenide) materials. These consumer electronics are frequently upgraded or discarded, leading to serious environmental contamination. Thus, electronic systems consisting of renewable and bi...
Scanning a charged tip above the two-dimensional electron gas inside a gallium arsenide/aluminum gallium arsenide nanostructure allows the coherent electron flow from the lowest quantized modes of a quantum point contact at liquid helium temperatures to be imaged. As the width of the quantum point contact is increased, its electrical conductance increases in quantized steps of 2 e(2)/h, where e...
Thermal noise is a limiting factor in many high-precision optical experiments. A search is underway for novel optical materials with reduced thermal noise. One such pair of materials, gallium arsenide and aluminum-alloyed gallium arsenide (collectively referred to as AlGaAs), shows promise for its low Brownian noise when compared to conventional materials such as silica and tantala. However, Al...
Controlling and monitoring individual spins is desirable for building spin-based devices, as well as implementing quantum information processing schemes. As with trapped ions in cold gases, magnetic ions trapped on a semiconductor lattice have uniform properties and relatively long spin lifetimes. Furthermore, diluted magnetic moments in semiconductors can be strongly coupled to the surrounding...
We report a diffraction-limited photonic terahertz (THz) source with linewidth <10MHz that can be used for nonlinear THz studies in the continuous wave (CW) regime with uninterrupted tunability in a broad range of THz frequencies. THz output is produced in orientation-patterned (OP) gallium arsenide (GaAs) via intracavity frequency mixing between the two closely spaced resonating signal and idl...
This thesis work focuses on the design, fabrication and measurement of Gallium Arsenide (GaAs) nano-optomechanical disk resonators. These disks are both GHz frequency mechanical resonators, and high Q (> 10) optical whispering gallery mode resonators. By confining optical and mechanical energy on a sub-μm volume, they enable extremely large optomechanical coupling strengths (g0 >1 MHz). We pres...
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