Widely tunable, Fourier-transform-limited pulses of terahertz (THz) radiation have been generated using (i) crystals of the highly nonlinear organic salt 4-N ,N -dimethylamino-4-N -methyl stilbazolium tosylate (DAST), (ii) zinc telluride (ZnTe) crystals, (iii) gallium phosphide (GaP) crystals, and (iv) low-temperature-grown gallium arsenide (LTG-GaAs) photomixers with THz spiral antennas. Outpu...

Solid-state power amplifiers at W-band (75 110 GHz) are attractive for the generation of local-oscillator (LO) power for super-heterodyne receivers operating at sub-millimetre wave frequencies, as needed for example in future space instruments for Earth observation. Apart from space applications there is a growing interest for these devices in for example millimetre wave imaging, communication ...

By using electron beam lithography, chemically assisted ion beam etching, and electroplating, we have fabricated high aspect ratio magnetic columns, 60–170 nm in diameter, embedded in an aluminum–gallium–oxide/gallium–arsenide @~Al0.9Ga0.1!2O3 /GaAs# substrate. In our previous work, we demonstrated storage of data in individual columns spaced 2 mm apart. Here the electroplated Ni columns are in...

Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on the (100) GaAs substrates, the misorientation toward [01-1] direction, using the low-pressure metal organic chemical vapor deposition method. It is found that the optical properties of the layers are same as those of the disordered ones, essentially different from the ordered ones having two orie...

We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device and circuit including resonator amplifier. separate their spectral components by model analysis. Detail flicker is investigated compared to charge sensor sensitivity. poi...

Three different elements, Silicon, Selenium, and Tellurium, are ion-implanted in Gallium arsenide to form a conducting layer that serves as back-gate molecular beam epitaxy (MBE) overgrown two-dimensional electron gas (2DEG). While the heavy ion Tellurium creates too many damages gallium layer, both Silicon Selenium show promising results combined with MBE-grown high-quality 2DEGs. Similar 2DEG...

In paper the influence of parameters inductively coupled chloropentafluoroethane plasma on rate and characteristics gallium arsenide etching was studied. Etched GaAs profiles by white light interferometry scanning electron microscopy were investigated. It turned out that process does not depend freon flow, but forward inductive power, as well pressure determined. this case, when power generator...

The nonlocal electrons heating in transistor heterostructures based on gallium nitride and arsenide is compared. It shown that if, comparison with a pure bulk material, the case of GaAs double doped pseudomorphic heterostructures, real space transfer significantly reduces their drift velocity overshot region strong field, then for GaN-based decrease studied cases does not exceed 30%.

The work is devoted to the analysis of influence acoustic losses on efficiency inducing resonant waves in single-crystal gallium arsenide plastids using infrared light pulses. It established that amplitude excited mechanical vibrations depends magnitude and position internal friction crystal temperature scale due acousto-electronic relaxation. Recommendations choice element alloying admixture a...

background: low-intensity laser therapy (lilt) can be utilized for different treatments in the fi eld of orthodontics and dentofacial orthopedics. the aim of the present study was to evaluate the effi cacy of lilt on (1) the rate of canine movement during canine retraction phase and (2) evaluate the radiographic changes occurring during lilt around the irradiated area. materials and methods: a ...