Interfacial As is shown to reduce reverse-bias current in AI-GaAs Schottky barriers. It is suggested that the leakage reduction is associated with the removal oflow work function phases at the interface. In addition, current-voltage measurements performed on Ino.75 Gaa.25 As-GaAs heterojunctions indicate a dependence upon the condition of the GaAs prior to deposition of the Ino.75 Gaa.25 As layer.

• In this work, the first integration of a continuous polycrystalline CdZnO thin layer on GaAs, one dominant mid-IR optoelectronic platforms, is reported. The preserved out-of-plane orientation crystal grain yields very minor degradation plasma damping compared to monocrystalline grown sapphire. CdZnO/GaAs system holds Surface Plasmon Polaritons with figure merit comparable best TCOs in mid-IR:...

Photothermal beam deflection studies were carried out with GaAs epitaxial double layers grown on semi-insulating GaAs substrates. The impurity densities in thin epitaxial layers were found to influence the effective thermal diffusivity of the entire structure.

The Open University's repository of research publications and other research outputs Formation of misfit dislocations in strained-layer GaAs/In x Ga 1–x As/GaAs heterostructures during postfabrication thermal processing Journal Article (2003). Formation of misfit dislocations in strained-layer GaAs/InxGa1–xAs/GaAs heterostructures during postfabrication thermal processing. It is demonstrated th...

Positron thermalization in Si and GaAs has been studied both by experiments and simulations. The decrease in the positron mean energy due to the interactions with longitudinal-acoustic phonons was calculated down to 4 K by solving numerically the Boltzmann equation for the positron momentum distribution. We find that the differences in the strength of the positron-phonon coupling can result in ...

High speed and low power consumption are vital in ICs for high-speed optical communications systems. Some of the competing IC elements in this field include: Si-BJT (Silicon Bipolar Transistor), Si-CMOS (Silicon Field Effect Transistor), SiGe-BJT (Silicon Germanium Bipolar Transistor), GaAs-HBT (Gallium Arsenide Heterobipolar Transistor), GaAs-FET (Gallium Arsenide Field Effect Transistor), and...

A bipolar transistor structure is proposed having application for either high frequency operation or integration with certain types of light emitting devices. The structure involves liquid phase epitaxially grown layers of GaAs for the collector and base regions, and of Ga,_,Al,As for the heterojunction emitter. The high frequency potential of this device results primarily from the high electro...