In this paper, a method based on continuous wavelet transform is suggested for calculation of flicker power. The flicker power can be utilized to identify the flicker direction to a flicker source with respect to a monitoring point. In our proposed method, using continuous Gaussian wavelet transform, pure flicker waveforms are extracted from the measured voltage and current signals. The flicker...

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Abstract Low‐frequency noise, generated inherently by the number or mobility fluctuation of carriers, is a crucial concern for design analog and digital circuits. Unified modelling based on experimental validation near‐DC noise in amplifiers long‐standing open problem. This article develops model low‐frequency deriving new bounds carrier capturing releasing. According to proposed model, measure...

We describe a high-performance, compact optical frequency standard based on microfabricated Rb vapor cell and low-noise, external cavity diode laser operating the two-photon transition at 778 nm. The achieves an instability of 1.8x10$^{-13}$/$\sqrt{\tau}$ for times less than 100 s flicker noise floor 1x10$^{-14}$ out to 6000 s. At long integration times, is limited by variations in probe power ...

Flicker sensitivities (1-30 Hz) in foveal, photopic vision were measured as functions of stimulus area with and without strong external white temporal noise. Stimuli were circular, sinusoidally flickering sharp-edged spots of variable diameters (0.25-4 degrees ) but constant duration (2 s), surrounded by a uniform equiluminant field. The data was described with a model comprising (i) low-pass f...

A 5.2-GHz CMOS receiver employs a double downconversion heterodyne architecture with a local oscillator frequency of 2.6 GHz and applies offset cancellation to the baseband amplifiers. Placing the image around the zero frequency, the receiver achieves an image rejection of 62 dB with no external components while minimizing the flicker noise upconversion in the first mixing operation. Realized i...

Abnormal increase of low frequency flicker noise in analog nMOSFETs with gate oxide in valence band tunneling domain is investigated. In 15Å oxide devices, valence-band electron tunneling from Si substrate to poly-gate occurs at a positive gate voltage and results in the splitting of electron and hole quasi Fermi-levels in the channel. The excess low frequency noise is attributed to electron an...

In this paper, a chopper stabilized fully differential CMOS pre-amplifier circuit is presented. The proposed circuit is designed for sub-atto Farad capacitive CMOS MEMS sensing applications. Chopper stabilization technique is employed to minimize flicker (1/f) noise and offsets in the circuit. The proposed circuit is designed using MIMOS 0.35 μm AMS CMOS 3.3 V technology and simulation results ...