نتایج جستجو برای: film characteristics

تعداد نتایج: 745334  

2014
Neelam Kumari Ashwini K. Singh P. K. Barhai

Study of Aluminum nitride (AlN) thin film deposited on silicon wafer and glass substrates by DC magnetron sputtering technique at different power variation. The X-ray diffraction and Fourier transform infrared spectroscopy (FTIR) study revealed the formation of the AlN phase. The optical characteristics of films, such as refractiveindex, extinction coefficient, and average thickness, were calcu...

2001
J. D. Carey

The effects of electrical current stressing on the field emission characteristics of hydrogenated amorphous carbon (a-C:H) thin films are reported. In these a-C:H films an initial conditioning treatment of the film is often required before the onset of stable emission and only after several voltage cycles do the values of the threshold field tend to converge. By stressing of the film by applyin...

Journal: :The Review of scientific instruments 2009
I G Trindade R Fermento D Leitão J B Sousa

In this article, a method to measure the electrical resistivity/conductivity of metallic thin films during layer growth on specific underlayers is described. The in situ monitoring of an underlayer electrical resistance, its change upon the incoming of new material atoms/molecules, and the growth of a new layer are presented. The method is easy to implement and allows obtaining in situ experime...

2012
D. Ambika Isaku Kanno

Pb(ZrxTi1-x)O3 [PZT] thin films of morphotropic phase boundary (MPB) composition having {001}, {110}, and {111}orientations were fabricated on silicon substrates (111)Pt/Ti/SiO2/Si using a metal organic decomposition spin-coating technique. The influence of crystallographic orientation on the transverse piezoelectric coefficient e31 * of the films have been determined. The largest e31 * was fou...

2014
M. Karthigai Pandian N. B. Balamurugan

In this paper, we propose new physically based threshold voltage models for short channel Surrounding Gate Silicon Nanowire Transistor with two different geometries. The model explores the impact of various device parameters like silicon film thickness, film height, film width, gate oxide thickness, and drain bias on the threshold voltage behavior of a cylindrical surrounding gate and rectangul...

2011

DESCRIPTION ISOPTIN SR (verapamil hydrochloride) is a calcium ion influx inhibitor (slow channel blocker or calcium ion antagonist). ISOPTIN SR is available for oral administration as light green, capsule shaped, scored, film-coated tablets containing 240 mg verapamil hydrochloride, as light pink, oval shaped, scored, film-coated tablets containing 180 mg verapamil hydrochloride, and as light v...

Nanoporous anodic aluminum oxide (AAO) has been used in many different fields of science and technology, due to its great structural characteristics. Solar selective surface is an important application of this type porous material. This paper investigates the effect of nanoporous AAO properties, including; film thickness, pore area percentage and pore diameter, on absorption spectra in the rang...

ژورنال: مجله دندانپزشکی 2007
 طهماسبی, محمد جواد , تابش, حامد , دباغی, آرش , کرباسی, نغمه ,

Background and Aim: Processing conditions affect sensitometric properties of X-ray films. In this study, we aimed to evaluate the sensitometric characteristics of InSight (IP), a new F-speed film, in fresh and used processing solutions in dental office condition and compare them with Ektaspeed Plus (EP).Materials and Methods: In this experimental in vitro study, an aluminium step wedge was used...

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