نتایج جستجو برای: field effect transistor fet
تعداد نتایج: 2342382 فیلتر نتایج به سال:
This paper introduces a modified particle swarm algorithm to handle multiobjective optimization problems. In multiobjective PSO algorithms, the determination of Pareto optimal solutions depends directly on the strategy of assigning a best local guide to each particle. In this work, the PSO algorithm is modified to assign a best local guide to each particle by using minimum angular distance info...
We report on theoretical investigation of graphene based Field Effect Transistor (FET) structures for resonant absorption of terahertz (THz) radiation by the plasmons excited in the high sheet concentration and high carrier mobility active layers. Metallic grating gates with varying periods were used to couple the THz radiation into the plasmons in the active region of the devices. Such grating...
Se-doping dependence of the transport properties in CBE-grown InAs nanowire field effect transistors
We investigated the transport properties of lateral gate field effect transistors (FET) that have been realized by employing, as active elements, (111) B-oriented InAs nanowires grown by chemical beam epitaxy with different Se-doping concentrations. On the basis of electrical measurements, it was found that the carrier mobility increases from 103 to 104 cm2/(V × sec) by varying the ditertiarybu...
A small forbidden gap matched to low-energy photons (meV) and a quasi-Dirac electron system are both definitive characteristics of bilayer graphene (GR) that has gained it considerable interest in realizing a broadly tunable sensor for application in the microwave region around gigahertz (GHz) and terahertz (THz) regimes. In this work, a systematic study is presented which explores the GHz/THz ...
Electrical and gas sensing properties of single-walled carbon nanotube networks functionalized with polyaniline (PANI-SWNTs) were systematically investigated to understand the gas sensing mechanisms and optimize sensing performance. The temperature-dependent electrical resistance and field-effect transistor (FET) transfer characteristics indicated that the electrical properties of PANI-SWNTs ar...
A 200-GHz integrated resistive subharmonic mixer based on a single chemical vapor deposition graphene field-effect transistor (G-FET) is demonstrated experimentally. This device has a gate length of 0.5 μm and a gate width of 2× 40 μm. The G-FET channel is patterned into an array of bow-tie-shaped nanoconstrictions, resulting in the device impedance levels of ∼50 and the ON–OFF ratios of ≥4. Th...
Mechanical forces generated by cells are known to influence a vast range of cellular functions ranging from receptor signaling and transcription to differentiation and proliferation. We report a novel measurement approach using zinc oxide nanorods as a peeping transducer to monitor dynamic mechanical behavior of cellular traction on surrounding substrate. We develop a ZnO nanorod field effect t...
Field-effect transistor (FET)-type biosensors have shown potential for use in label-free electrical detection with high sensitivity. An ion-selective FET (ISFET) utilizes a reference electrode in the form of an aqueous solution. Its conductance is dependent on charged species on the surface of the ISFET. The sensitivity of nanowire FETs (NWFETs) is high enough to enable single-molecule detectio...
Using a silicon nanowire field-effect transistor (SiNW-FET) for biomolecule detections, we selected 3-(mercaptopropyl)trimethoxysilane (MPTMS), N-[6-(biotinamido)hexyl]-3(')-(2(')-pyridyldithio) propionamide (biotin-HPDP), and avidin, respectively, as the designated linker, receptor, and target molecules as a study model, where the biotin molecules were modified on the SiNW-FET to act as a rece...
Hybrid nanoelectronics consisting of nanodevice crossbars on top of CMOS backplane circuits is emerging as one viable option to sustain Moore's law after the CMOS scaling limit is reached. One main design challenge in such hybrid nanoelectronics is the interface between the highly dense nanowires in nanodevice crossbars and relatively coarse microwires in the CMOS domain. Such an interface can ...
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