نتایج جستجو برای: field effect transistor fet

تعداد نتایج: 2342382  

2012
Ufuk ÖZKAYA Filiz GÜNEŞ

This paper introduces a modified particle swarm algorithm to handle multiobjective optimization problems. In multiobjective PSO algorithms, the determination of Pareto optimal solutions depends directly on the strategy of assigning a best local guide to each particle. In this work, the PSO algorithm is modified to assign a best local guide to each particle by using minimum angular distance info...

2013
Nezih Pala Mustafa Karabiyik Chowdhury Al-Amin

We report on theoretical investigation of graphene based Field Effect Transistor (FET) structures for resonant absorption of terahertz (THz) radiation by the plasmons excited in the high sheet concentration and high carrier mobility active layers. Metallic grating gates with varying periods were used to couple the THz radiation into the plasmons in the active region of the devices. Such grating...

2012
Leonardo Viti Miriam S Vitiello Daniele Ercolani Lucia Sorba Alessandro Tredicucci

We investigated the transport properties of lateral gate field effect transistors (FET) that have been realized by employing, as active elements, (111) B-oriented InAs nanowires grown by chemical beam epitaxy with different Se-doping concentrations. On the basis of electrical measurements, it was found that the carrier mobility increases from 103 to 104 cm2/(V × sec) by varying the ditertiarybu...

2013
Akram M Mahjoub Alec Nicol Takuto Abe Takahiro Ouchi Yuhei Iso Michio Kida Noboyuki Aoki Katsuhiko Miyamoto Takashige Omatsu Jonathan P Bird David K Ferry Koji Ishibashi Yuichi Ochiai

A small forbidden gap matched to low-energy photons (meV) and a quasi-Dirac electron system are both definitive characteristics of bilayer graphene (GR) that has gained it considerable interest in realizing a broadly tunable sensor for application in the microwave region around gigahertz (GHz) and terahertz (THz) regimes. In this work, a systematic study is presented which explores the GHz/THz ...

Journal: :Nanotechnology 2010
Jae-Hong Lim Nopparat Phiboolsirichit Syed Mubeen Marc A Deshusses Ashok Mulchandani Nosang V Myung

Electrical and gas sensing properties of single-walled carbon nanotube networks functionalized with polyaniline (PANI-SWNTs) were systematically investigated to understand the gas sensing mechanisms and optimize sensing performance. The temperature-dependent electrical resistance and field-effect transistor (FET) transfer characteristics indicated that the electrical properties of PANI-SWNTs ar...

2016
Michael A. Andersson

A 200-GHz integrated resistive subharmonic mixer based on a single chemical vapor deposition graphene field-effect transistor (G-FET) is demonstrated experimentally. This device has a gate length of 0.5 μm and a gate width of 2× 40 μm. The G-FET channel is patterned into an array of bow-tie-shaped nanoconstrictions, resulting in the device impedance levels of ∼50 and the ON–OFF ratios of ≥4. Th...

2017
Xianli Zong Rong Zhu

Mechanical forces generated by cells are known to influence a vast range of cellular functions ranging from receptor signaling and transcription to differentiation and proliferation. We report a novel measurement approach using zinc oxide nanorods as a peeping transducer to monitor dynamic mechanical behavior of cellular traction on surrounding substrate. We develop a ZnO nanorod field effect t...

Journal: :Small 2009
Bonsang Gu Tae Jung Park Jae-Hyuk Ahn Xing-Jiu Huang Sang Yup Lee Yang-Kyu Choi

Field-effect transistor (FET)-type biosensors have shown potential for use in label-free electrical detection with high sensitivity. An ion-selective FET (ISFET) utilizes a reference electrode in the form of an aqueous solution. Its conductance is dependent on charged species on the surface of the ISFET. The sensitivity of nanowire FETs (NWFETs) is high enough to enable single-molecule detectio...

Journal: :Nanotechnology 2011
Chia-Chang Tsai Pei-Ling Chiang Chih-Jung Sun Tsung-Wu Lin Ming-Hsueh Tsai Yun-Chorng Chang Yit-Tsong Chen

Using a silicon nanowire field-effect transistor (SiNW-FET) for biomolecule detections, we selected 3-(mercaptopropyl)trimethoxysilane (MPTMS), N-[6-(biotinamido)hexyl]-3(')-(2(')-pyridyldithio) propionamide (biotin-HPDP), and avidin, respectively, as the designated linker, receptor, and target molecules as a study model, where the biotin molecules were modified on the SiNW-FET to act as a rece...

Journal: :Nanotechnology 2008
Shu Li Tong Zhang

Hybrid nanoelectronics consisting of nanodevice crossbars on top of CMOS backplane circuits is emerging as one viable option to sustain Moore's law after the CMOS scaling limit is reached. One main design challenge in such hybrid nanoelectronics is the interface between the highly dense nanowires in nanodevice crossbars and relatively coarse microwires in the CMOS domain. Such an interface can ...

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