We demonstrated 10-GHz all-optical clock recovery using an erbium-doped fiber laser incorporating an electro-absorption modulator and linear optical amplifier. Stable clock pulses with peak power of 200 mW and pulsewidth of 6 ps are obtained.

The study investigated the photoluminescent properties of undoped and rare-earth element erbium - doped solid solutions GaS1-xSex0.1аt% irradiated with gamma-quanta. Erbium doping reduces photoluminescence intensity in solutions. After irradiation Dg= 300-1000Gy, increases. An increase is explained by a decrease concentration centers responsible for fast recombination channel associated lattice...

Spectroscopic investigations reveal the presence of a fast quenching process in erbium-doped aluminum oxide waveguides. We quantify the percentage of quenched ions and make predictions about the amplifier performance. Optical amplifiers; integrated optics materials; fast quenching processes; aluminum oxide

This paper aims to analyse the research trend of erbium-doped tellurite glasses. To this aim, applied bibliometric analysis. The comprehensive document on topic glasses in Scopus database is 695 documents. result revealed that scientific publication has been increasing. China contributed most documents visualization assisted with VOSviewer software and resulted four primary clusters: (1) red cl...

Erbium-doped materials have been investigated for generating and amplifying light in low-power chip-scale optical networks on silicon, but several effects limit their performance in dense microphotonic applications. Stoichiometric ionic crystals are a potential alternative that achieve an Er(3+) density 100 x greater. We report the growth, processing, material characterization, and optical prop...

In this paper we propose the application of H! control within optical networks. Specifically, we aim to suppress the cross-gain modulation effects within Erbium-doped fiber amplifiers owed to pilot tone disturbances used for optical monitoring. Based on the characteristics of these pilot tone disturbances, we design an H! controller to improve transient performance of optical channels within th...

This work describes the comparison of the amplification characteristics (gain) and the Noise figure (NF) of the Thulium and Erbium in three different host materials which the Yttria Alumina-Silica glass, Fluoride and Tellurite fiber glass. The gain using these host materials covers the range 1.45-1.65 μm. Thulium doped fiber amplifier (TDFAs) operated in the region of wavelength (1480-1510 nm) ...

The integration of photonic materials into CMOS processing involves the use of new materials. A simple one-step metal-organic radio frequency plasma enhanced chemical vapor deposition system (RF-PEMOCVD) was deployed to grow erbium-doped amorphous carbon thin films (a-C:(Er)) on Si substrates at low temperatures (<200 °C). A partially fluorinated metal-organic compound, tris(6,6,7,7,8,8,8-hepta...

Light-induced generation of free charge carriers in semiconductors constitutes the physical basis of photodetection and photovoltaics. To maximize its efficiency, the energy of the photons must be entirely used for this purpose. This is highly challenging owing to the ultrafast thermalization of 'hot' carriers, which are created by absorption of high-energy photons. Thermalization leads to heat...