Quantum transport properties of electron systems driven by strong electric fields are studied by mapping the Landau-Zener transition dynamics to a quantum walk on a semi-infinite one-dimensional lattice with a reflecting boundary, where the sites correspond to energy levels and the boundary the ground state. Quantum interference induces a distribution localized around the ground state, and a de...

Multipactor breakdown analysis is presented in cylindrical dielectric resonator waveguide filter under its dual-mode behavior. The method of effective electron algorithm with combination of Monte-Carlo method is used to perform the simulation and predict multipactor breakdown thresholds. The breakdown thresholds of the proposed structure are presented for different values of frequency-gap produ...

Control of the fundamental absorption edge of a quantum dot with an applied electric field has been limited by the breakdown fields of the solid-state material surrounding the dot. However, much larger fields can be applied at the interface of two immiscible electrolytic solutions (ITIES) in an electrochemical cell. These electric fields also localize the quantum dots at the ITIES. Our analysis...

[1] By modifying the avalanche mode of runaway breakdown to include positive feedback from gammarays and positrons, it is found that enormous bursts of energetic radiation can be produced in strong electric fields in air, with peak fluxes up to one billion times greater than from conventional models. These bursts generate so many runaway electrons that the electric field is very rapidly dischar...

A theory of integer quantum Hall effect(QHE) in realistic systems based on von Neu-mann lattice is presented. We show that the momentum representation is quite useful and that the quantum Hall regime(QHR), which is defined by the propagator in the momentum representation, is realized. In QHR, the Hall conductance is given by a topological invariant of the momentum space and is quantized exactly...

Vertical structured Gallium nitride (GaN) p-n junction diodes with improved breakdown properties have been demonstrated using high-k dielectric passivation underneath the field plate. Simulation results at a reverse voltage of 1 kV showed that the maximum electric field near the mesa-etched p-n junction edges covered with film of dielectric constant k = 10 was reduced to 2.0 MV/cm from 3.0 MV/c...