Numerous technological innovations, including material and process changes such as high–k gate dielectrics and metal gate electrodes, are investigated to meet the upcoming scaling requirements. Furthermore, novel structures such as ultra-thin body and multiple-gate MOSFETs are expected to be introduced to suppress short-channel effects [1]. To overcome the technological problems, further theore...

The selectivity of a chemiresistive gas sensor comprising an array of single-crystalline tin oxide nanowires (NWs) is shown to be greatly enhanced by combined temperature and gate voltage modulation. This dual modulation was effected by a novel microsensor platform that consisted of a suspended nitride membrane embedded with independently addressable platinum heater and back-gate structures. Th...

polyvinylpyrrolidone  /  nickel  oxide  (pvp/nio)  dielectrics  were fabricated  with  sol-gel  method  using  0.2  g  of  pvp  at  different working  temperatures  of  80,  150  and  200  ºc.  structural  properties and surface morphology of the hybrid films were investigated by x-ray  diffraction  (xrd)  and  scanning  electron microscope  (sem) respectively. energy dispersive x-ray spectrosc...