has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, p223511, 2014]. The resulting structures boast the highest reported mobility for InGaN channels and superior transport at high temperature, according to the research team. Nitride semicondu...

We present analytical physics-based compact models for the Schottky barriers at interfaces between organic semiconductor and source drain contacts in thin-film transistors (TFTs) fabricated coplanar staggered device architecture, we illustrate effect of these on current-voltage characteristics TFTs. The model barrier explicitly considers field-dependent lowering due to image charges. Potential ...

Demand for accommodating more and new functionalities within a single chip such as SOC needs novel devices architecture FinFET instead of MOSFET. emerged non-planar, multigate device to overcome short channel effects subthreshold swing deterioration, drain induced barrier lowering threshold voltage roll-off which degrade circuit performance. As the need technology is mounting in electronic gadg...

In this work, we demonstrated considerable enhancement of the transport characteristics n-type Al2O3/In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (n-MOSFETs) with assistance in situ NH3/N2 remote-plasma (RP) treatment. According to measurement and simulation results, RP treated sample shows superior device performances as compared control without plasma treatment including ...

LNA, the author stated that there were other sources of noise outside of the amplifier that added to the noise figure, such as board parasitics as well as noisy bias components. The author further stated that the prediction of the model presented here is similar to the noise figures presented in similar CMOS LNA's.[4] IV. Conclusion A complete model for the drain current noise for MOSFET device...

Ensemble Monte Carlo simulations have been carried out to investigate the effects of Gate length and different sourcedrain bias on the characteristics of wurtzite SiC MOSFETs. Electronic states within the conduction band valleys are represented by non-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone. The following scattering mechanisims, i.e, impurity, po...

As transistor dimensions are scaled down in accordance with Moore's Law to provide for improved performance and cost per function, variability in transistor performance grows in significance and can present a major challenge for achieving high yield in the manufacture of integrated circuits utilizing transistors with sub-30 nm gate lengths. Increased variability in the threshold voltage (V T) o...

in this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (ldds-cntfet) with a negative differential resistance (ndr) characteristic, called negative differential resistance ldds-cntfet (ndr-ldds-cntfet). the device was simulated by using a non equilibrium green’s function method. to achieve this phenomenon, we have created...