نتایج جستجو برای: diffusion layer
تعداد نتایج: 436727 فیلتر نتایج به سال:
Dopant diffusion in semiconductors is an interesting phenomenon from both technological and scientific points of view. Firstly, dopant diffusion is taking place during most of the steps in electronic device fabrication and, secondly, diffusion is related to fundamental properties of the semiconductor, often controlled by intrinsic point defects: self-interstitials and vacancies. This thesis inv...
The theory of limiting diffusion-migration currents is presented for partially dissociated electrolytes without the assumption that the dissociation reaction is in equilibrium and is based on the Nernst diffusion layer model.
This work reports on a mechanism for irreversible resistive switching (RS) transformation from bipolar to unipolar RS behavior in SrRuO3 (SRO)/Cr-doped SrZrO3 (SZO:Cr)/Pt capacitor structures prepared on a Ti/SiO2/Si substrate. Counter-clockwise bipolar RS memory current-voltage (I-V) characteristics are observed within the RS voltage window of -2.5 to +1.9 V, with good endurance and retention ...
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