نتایج جستجو برای: dielectric film

تعداد نتایج: 127390  

2013
Ullas G. Kalappura Paulbert Thomas Cyriac M. Odackal K. T. Mathew

Arrowroot (Maranta arundinacea) and Chitosan are two well-known materials used in medical and scientific applications. Both materials possess medicinal properties and have the ability to form thick gels. Chitosan-reinforced Arrowroot film was developed and its dielectric characterization was performed at microwave frequencies. Cavity perturbation method was used for the measurement. The study p...

Journal: :Optics express 2013
Hongwen Ren Su Xu Yifan Liu Shin-Tson Wu

An optically anisotropic microlens array film directly formed on a single substrate is demonstrated. UV curable diacrylate monomers are coated as a film on the substrate. Under the action of fringing field, not only the film surface is flattened by the generated dielectric force but also the monomers are reoriented to form a gradient refractive index (GRIN) distribution in the film. Via UV expo...

2008
Akhlesh Lakhtakia

In the Kretschmann configuration, the bulk metal is in the form of a thin film of uniform thickness, bounded on one side by a high–refractive–index dielectric material and on the other side by a low–refractive–index dielectric material. A plane wave is launched in the optically denser dielectric material towards the metal film, in order to excite a surface–plasmon wave at the interface of the m...

2017
Jiaxin Hou Wenwen Ding Yancong Feng Lingling Shui Yao Wang Hao Li Nan Li Guofu Zhou Felix H. Schacher

In electrowetting devices, hydrophobic insulating layer, namely dielectric layer, is capable of reversibly switching surface wettability through applied electric field. It is critically important but limited by material defects in dielectricity, reversibility, film forming, adhesiveness, price and so on. To solve this key problem, we introduced a novel fluorinated polyacrylate—poly(1H,1H,2H,2Hp...

Journal: :ACS applied materials & interfaces 2018
Andrés Black Jonathan Roberts María Acebrón Ramón Bernardo-Gavito Ghazi Alsharif Fernando J Urbanos Beatriz H Juárez Oleg V Kolosov Benjamin J Robinson Rodolfo Miranda Amadeo L Vázquez de Parga Daniel Granados Robert J Young

This work explores the assembly of large-area heterostructures comprised of a film of silica-encapsulated, semiconducting colloidal quantum dots, deposited via the Langmuir-Blodgett method, sandwiched between two graphene sheets. The luminescent, electrically insulating film served as a dielectric, with the top graphene sheet patterned into an electrode and successfully used as a top gate for a...

2014
K. L. Yadav

Structural, Dielectric and magnetic properties 0.3 CoFe2O4–0.7 BaTiO3–PVDF (polyvinylidene fluride) composite film with different concentration of PVDF: 20, 30 and 40 wt% are reported here for the first time. The structural analysis was carried out using X-Ray diffraction technique, which indicates cubic spinel structure for ferrite phase CoFe2O4 (CFO) and tetragonal structure for ferroelectric...

Journal: :Optics express 2006
Young-Sik Ghim Seung-Woo Kim

As an extension of the authors' previous report of Ref 1, we describe an improved version of dispersive white-light interferometry that enables us to measure the tomographical thickness profile of a thin-film layer through Fourier-transform analysis of spectrally-resolved interference signals. The group refractive index can also be determined without prior knowledge of the geometrical thickness...

Journal: :Angewandte Chemie 2014
Kang Hyuck Lee Hyeon-Jin Shin Brijesh Kumar Han Sol Kim Jinyeong Lee Ravi Bhatia Sang-Hyeob Kim In-Yeal Lee Hyo Sug Lee Gil-Ho Kim Ji-Beom Yoo Jae-Young Choi Sang-Woo Kim

Unintentionally formed nanocrystalline graphene (nc-G) can act as a useful seed for the large-area synthesis of a hexagonal boron nitride (h-BN) thin film with an atomically flat surface that is comparable to that of exfoliated single-crystal h-BN. A wafer-scale dielectric h-BN thin film was successfully synthesized on a bare sapphire substrate by assistance of nc-G, which prevented structural ...

2008
Sung Pil Lee Ji Gong Lee Shaestagir Chowdhury

An integrated humidity sensor system with nano-structured carbon nitride film as humidity sensing material is fabricated by a 0.8 μm analog mixed CMOS process. The integrated sensor system consists of differential humidity sensitive field effect transistors (HUSFET), temperature sensor, and operational amplifier. The process contains two poly, two metal and twin well technology. To form CNx fil...

2017
Zhenxiang Cheng Xiaolin Wang S X. Dou Hideo Kimura Kiyoshi Ozawa Shixue Dou

We report the significant improvement of the ferroelectric properties of BiFeO3thin film through control of electrical leakage by Nb doping. A very large remanent electrical polarization value of 80 μC/cm2 was observed in Bi0.8La0.2Nb0.01Fe0.99O3 thin film on Pt/Ti/SiO2/Si substrate. The doping effect of Nb in reducing the movable charge density due to oxygen vacancies in BiFeO3 was confirmed b...

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