نتایج جستجو برای: detectivity
تعداد نتایج: 428 فیلتر نتایج به سال:
An InAs/AlGaAs quantum-dot infrared photodetector based on bound-to-bound intraband transitions in undoped InAs quantum dots is reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 m. At 77 K and 0.7 V bias, the responsivity was 14 mA/W and the detectivtiy, , was 10 cm Hz /W. M IDand far-infrared (3–20 m) detection is a key technology for n...
Sensing from the ultraviolet-visible to the infrared is critical for a variety of industrial and scientific applications. Photodetectors with broad spectral response, from 300 nm to 1,100 nm, were fabricated using a narrow-band gap semiconducting polymer blended with a fullerene derivative. By using both an electron-blocking layer and a hole-blocking layer, the polymer photodetectors, operating...
We report an nBn photodetector based on the AlInAsSb digital alloy materials system, which has advantage of a near-zero valence band offset. These photodetectors have achieved 28% external quantum efficiency, dark current densities 2.6 × 10−3 A/cm2 at 300 K and 1.8 10−9 100 with −0.5 V bias, detectivity 1.7 1010 Jones room temperature under 2 μm wavelength illumination.
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