A tunable transmitter featuring an SG-DBR laser is integrated with an undercut-etched, high impedance traveling-wave EAM. This device demonstrates 40 Gbps operation with >8.5 dB extinction over 25 nm tuning with 2.1 V drive. c © 2008 Optical Society of America OCIS codes: (140.3600) Tunable lasers; (230.4110) Modulators; (230.4205) MQW modulators; (230.7020) Traveling-wave devices

Attempts to commercialize GaN VCSELs have been unsuccessful to date due to the challenges of manufacturability of DBR mirrors, difficulties associated with current blocking, and the complexity of laser liftoff. The new process flow overcomes all three challenges enabling the manufacturing of IIINitride VCSEL without liftoff and with much reduced complexity and the possibility of on-wafer testing.

A monolithically integrated device combines 40 GHz dual mode-locked operation with the wide tuning range (>40nm) of sampled-grating DBR lasers, while further being integrated to an SOA and a potentially high-speed modulator. OCIS codes: (250.5300) Photonic integrated devices; (140.3600) Lasers, tunable; (140.4050) Mode-locked lasers

This paper presents a computationally-efficient approach to multilingual NL generation (NLG) from a knowledge base (KB) of Conceptual Graphs (CG). The NLG module is integrated in a Machine-Aided Translation prototype providing interactive explanations of domain knowledge for end users and was developed in the DB-MAT and DBR-MAT projects.

Attempts to commercialize GaN VCSELs have been unsuccessful to date due to the challenges of manufacturability of DBR mirrors, difficulties associated with current blocking, and the complexity of laser liftoff. The new process flow overcomes all three challenges enabling the manufacturing of IIINitride VCSEL without liftoff and with much reduced complexity and the possibility of on-wafer testing.

Attempts to commercialize GaN VCSELs have been unsuccessful to date due to the challenges of manufacturability of DBR mirrors, difficulties associated with current blocking, and the complexity of laser liftoff. The new process flow overcomes all three challenges enabling the manufacturing of IIINitride VCSEL without liftoff and with much reduced complexity and the possibility of on-wafer testing.

Attempts to commercialize GaN VCSELs have been unsuccessful to date due to the challenges of manufacturability of DBR mirrors, difficulties associated with current blocking, and the complexity of laser liftoff. The new process flow overcomes all three challenges enabling the manufacturing of IIINitride VCSEL without liftoff and with much reduced complexity and the possibility of on-wafer testing.

INTRODUCTION The National Institute for Health and Clinical Excellence guidelines recommend that breast reconstruction should be available to all women undergoing mastectomy and discussed at the initial surgical consultation (2002, and updated 2009). The National Mastectomy and Breast Reconstruction Audit (2009) showed that 21% of mastectomy patients underwent immediate breast reconstruction (I...

Compact and room-temperature operable terahertz emitting devices have been proposed using a semiconductor coupled multilayer cavity that consists of two functional cavity layers and three distributed Bragg reflector (DBR) multilayers. Two cavity modes with an optical frequency difference in the terahertz region are realized since two cavities are coupled by the intermediate DBR multilayer. In t...

Record high differential efficiency (53.2%) and full optical efficiency (48%) for a multimode diode-pumped Yb:KYW laser have been achieved. The characteristics of the laser and methods for improving its efficiency using a distributed Bragg reflector tapered diode laser (DBR TDL) are discussed.