introduction: we have recently reported the presence of two potassium currents with 598 and 368 ps conductance in the rough endoplasmic reticulum (rer) membrane. the 598 ps channel was voltage dependent and atp sensitive. however, the 368 ps channel was rarely observed and its identity remained obscure. since cationic channels in intracellular organelles such as mitochondria and rer play import...

In this paper, using vortex blob method (VBM), turbulent flow in a channel is studied and physical concepts of turbulence are obtained and discussed. At first, time-averaged velocities,  and , and then their fluctuations are calculated. To clarify turbulence structures, velocity fluctuations and  are plotted. It is observed that turbulence structures occupy different positions and move with con...

Wireless underground sensor networks (WUSNs) consist of buried nodes, which are connected to subsurface underground sensors, and use electromagnetic (EM) waves for underground communications. WUSNs are capable of operating in environments where no other computer network has functioned before, and has the potential to provide real-time, robust, and energy efficient sensing, and communication in ...

As wireless networks continue to grow, users will be demanding more service diversity and differential quality-of-service (QoS). At the packet level, differential QoS is met by means of scheduling for channel access. Several algorithms have been proposed for packet scheduling over the wireless link. The main consideration in the design of these algorithms is the characteristics of the wireless ...

The data rates required to support multimedia services over wireless communication systems is rapidly increasing. Mobile radio propagation channel characteristics play a very important role in assessing the performance of a wireless wideband communication system. The mean excess delay and RMS delay spread are the two main parameters that dominate wideband propagation characteristics. The wideba...

In this paper we investigate the electrical characteristics of a new structure of gate all around strained silicon nanowire field effect transistors (FETs) with dual dielectrics by changing the radius (RSiGe) of silicon-germanium (SiGe) wire and gate dielectric. Indeed the effect of high-κ dielectric on Field Induced Barrier Lowering (FIBL) has been studied. Due to the higher electron mobility ...