This paper presents an improved master–slave bipolar Si–SiGe HBT comparator design for ultra-high-speed data converter applications. The latch is maintained during the track stage facilitating quick transition back to the latch stage, increasing the sampling speed of the comparator. Implemented in a 0.5m 55-GHz BiCMOS Si–SiGe process, this comparator consumes approximately 80 mW with sampling s...