We report a first principles analysis of electron-phonon coupling in molecular devices under external bias voltage and during current flow. Our theory and computational framework are based on carrying out density functional theory within the Keldysh nonequilibrium Green's function formalism. Using a molecular tunnel junction of a 1,4-benzenedithiolate molecule contacted by two aluminum leads as...

A new current mode precision rectifier is presented. This circuit provides precision rectification for wide range of input signal with low temperature sensitivity. It can work as full wave rectifier as well as half wave rectifier with controllability on action. It can amplify rectified current signal by a bias voltage. Direction of the output current signal can also be controlled by changing th...

The most promising scheme for high-speed low power communication over long on-chip interconnects is Current-mode signaling (CMS) with dynamic overdriving scheme. A variation tolerant dynamic overdriving CMS scheme is proposed. The proposed CMS scheme employs a smart bias circuit in transmitter side. The smart bias is energy efficient and it reduces the delay. Current-mode signaling (CMS) scheme...

Long lasting colored pattern formation on sol–gel deposited vanadium pentoxide sV2O5d thin films is demonstrated by atomic force microscope sAFMd nanolithography. The films can be locally colorized by application of a positive dc bias voltage on the conductive AFM tip. The patterns can be erased, or “bleached,” by application of a negative bias voltage. The changes in optical reflectivity, topo...

Body Bias (BB) control on Silicon On Insulator (SOI) mitigates power consumption on the stand-by mode. However, Negative Bias Temperature Instability (NBTI) changes by BB. We measure the NBTI of ring oscillators on thin buried oxide (BOX) fully-depleted SOI process. NBTI is suppressed and power consumption becomes lower by applying Reverse BB (RBB) because larger threshold voltage decreases car...

Transport measurements on a bundle of single-walled carbon nanotubes have been made below 4.2 K as a function of side gate and source–drain bias voltage. The transport of an individual nanotube is described by the Coulomb blockade effect. The zero-dimensional quantum states of the nanotube become clear for measurements of large bias voltage. In addition, we present preliminary results of microw...

The controllability of charge transport through an organic molecular spin-valve system is theoretically investigated on the basis of a Su-Schrieffer-Heeger model combined with the non-equilibrium Green’s function formalism. We show how the formation of polaron in the organic sub-structure leads to a hysteretic conductance switching, via sweeping either the bias voltage or the electrochemical po...

We describe the electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays fabricated on doped semiconductor substrates. The hybrid metal-semiconductor forms a Schottky diode structure, where the active depletion region modifies the substrate conductivity in real-time by applying an external voltage bias. This enables effective control of the resonance en...

Deterministic oscillations of current-induced metastable resistivity in changing voltage have been detected in La0.82Ca0.18MnO3 single crystals. At low temperatures, below the Curie point, application of specific bias procedures switches the crystal into metastable resistivity state characterized by appearance of pronounced reproducible and random structures in the voltage dependence of the dif...

Fourier transform infrared spectroscopy (ETIR) of a ferroelectric liquid-ciystalline material: 4-(3)-(S>methy1-2..(S) chloropentanoyloxy-4'-octyloxy-biphenyl has been investigated in the wavenumber range 450-4000 cm for various temperatures and as a function of direct bias voltage in its SmC* phase. Samples prepared in both homeotropic and homogeneous alignments have been studied. The order par...