The ion-sensitive field effect transistor (ISFET) of chemical sensors has been used due to many reasons which have the advantages of small size, light weight and fast response by semiconductor processing. In recently, the sensing membranes applied to high-k materials such as Al2O3, ZrO2, HfO2, TiO2 and Ta2O5 for pH-ISFET were investigated because of the high sensitivity [1]. The Al2O3 film amon...

The Minnesota Nano Center’s Keller Hall facility includes an atomic layer deposition (ALD) machine that is capable of depositing uniform alumina (Al2O3), hafnium oxide (HfO2), silicon dioxide (SiO2), zinc oxide (ZnO), and titanium dioxide (TiO2). ALD works by building alternate layers on a film using two different precursor gases – one usually supplying the metallic atoms and water vapor (H2O) ...

We report on a GaN metal-oxide-semiconductor field-effect-transistor (MOSFET) using atomic-layer-deposited (ALD) Al2O3 as the gate dielectric. Compared to a GaN metal-semiconductor field-effect-transistor (MESFET) of similar design, the MOSFET exhibits several orders of magnitude lower gate leakage and near three times higher channel current. This implies that the ALD Al2O3/GaN interface is of ...

Using a reactive force field ~ReaxFF!, we investigated the structural, energetic, and adhesion properties, of both solid and liquid Al/a-Al2O3 interfaces. The ReaxFF was developed solely with ab initio calculations on various phases of Al and Al2O3 and Al-O-H clusters. Our computed lattice constants, elastic constants, surface energies, and calculated work of separation for the solid-solid inte...

Currently, aluminum oxide stacked with silicon nitride (Al2O3/SiNx:H) is a promising rear passivation material for high-efficiency P-type passivated emitter and rear cell (PERC). It has been indicated that atomic layer deposition system (ALD) is much more suitable to prepare high-quality Al2O3 films than plasma-enhanced chemical vapor deposition system and other process techniques. In this stud...

The work aimed to evaluate the nanoalumina toxicity on the histological architecture, some haematological and biochemical aspects in male albino rats, during acute and sublethal experiments. Rats, in acute experiments, were injected with a single-acute dose of 3.9 g or 6.4 g or 8.5 g of aluminium oxide (Al2O3) kg(-) (1), whereas those of sublethal were injected with 1.3 g of Al2O3 kg(-) (1)2 da...

Although CdS and PbS quantum dot-sensitized TiO2 nanotube arrays (TNTAs/QDs) show photocatalytic activity in the visible-light region, the low internal quantum efficiency and the slow interfacial hole transfer rate limit their applications. This work modified the surface of the TNTAs/QDs photoelectrodes with metal-oxide overlayers by atomic layer deposition (ALD), such as coating Al2O3, TiO2, a...

Selective synthesis of benzo[f]tetraphenes or benzo[g]chrysenes was achieved via aromatic C-F bond cleavage and unprecedented regioselective C-C bond formation depending upon the choice of aluminium reagents. On treatment with AlCl3, 2-(biphenyl-2-yl)-1-fluoronaphthalenes afforded exclusively benzo[f]tetraphenes via C-C bond formation on the carbon atom γ to the original position of the fluorin...

In order to elucidate the effect of sodium on the activity of ZSM-5 supported metal oxides catalysts (ZnO-Al2O3/ZSM-5 and SnO-Al2O3/ZSM-5) for the transesterification of soybean oil with methanol, ZSM-5 supported metal oxides were prepared with and without sodium hydroxide by impregnation. The metal compositions of the ZSM-5 supported metal oxide catalysts and the metal concentrations dissolved...

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