E-mode hybrid ferroelectric charge storage gate (FEG) GaN HEMTs have shown promising performances for future power device applications. The FEG-HEMT demonstrates a combination of polarization and trapping process in the ferro-charge-storage stack, leading to positive threshold voltage shift operations. In this work, FEG-HEMTs with various Hf-based Zr-based layers are systematically studied. whi...

Traditional lumped small signal equivalent circuit models of AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOS-HEMTs) are made up constant valued elements. Such unable to capture the frequency behavior (above 20 GHz) device. In this work, a modified model MOS-HEMTs is presented. The key feature proposed that values different elements in considered be dependent nature a...

Abstract AlGaN/GaN high electron mobility transistors (HEMTs) on GaN substrates with different thicknesses of channel and C-doped buffer layers were fabricated characterized conventional DC side-gate (SG) measurements. In SG measurement, drain current ( I D ) was measured while bias V applied through a separate contact that surrounds the device active region. Whereas all HEMTs have comparable m...

GaN high-electron-mobility transistors (HEMTs) on silicon substrate have attracted much attention owing to the low-cost and large area availability of Si substrate. In this paper, 90-nm-gate-length InAlN/GaN HEMT was fabricated device electrical properties were studied. The presents a low drain-induced barrier lowing (DIBL) 43 mV/V, parasitic source resistance (RS) 0.91 ??mm, peak intrinsic tra...

GaN-on-Si high-electron-mobility transistors (HEMTs) exhibit excellent properties for efficient power conversion. Nevertheless, a considerable energy loss associated with the charging and discharging of output capacitance ( C OSS ) in these severely limits their application at high switching fre...

In this work, the physical based device model of AlGaN/GaN high electron mobility transistors (HEMTs) has been established and the corresponding device operation behavior has been investigated also by using Sentaurus TCAD from Synopsys. Advanced AlGaN/GaN hetero-structures with GaN cap layer and AlN spacer have been considered and the GaN cap layer and AlN spacer are found taking important role...

AlGaN/GaN high electron mobility transistors (HEMTs) passivated with LPCVD SiyNz and AlxSiyNz were fabricated side-by-side, and their performance compared in DC, small-signal, and large-signal test environments. AlxSiyNz passivated devices measured a reduced dependence of source resistance with drain current density, 1.5 x the breakdown voltage, and an increased microwave output power and power...