In this paper we review some of the state of the art techniques for parasitic interconnect extraction in the presence of random geometrical variations due to uncertainties in the manufacturing processes. We summarize some of the most recent development in both sampling based (non-intrusive) and expansion based (intrusive) algorithms for the extraction of both general impedance and capacitance i...

It is widely-known that coupling exists between adjacent through-silicon vias (TSVs) in 3D ICs. Since this TSVto-TSV coupling is not negligible, it is highly likely that TSVto-TSV coupling affects crosstalk significantly. Although a few works have already analyzed coupling in 3D ICs, they used Sparameter-based methods under the assumption that all ports in their simulation structures are under ...

This paper presents a new model for the statistical analysis of the impact of Random Telegraph Noise (RTN) on circuit delay. This RTN-aware delay model have been developed using Pseudo RTN based on a Markov process with RTN statistical property. We have also measured RTNinduced delay fluctuation using a circuit matrix array fabricated in a 65nm process. Measured results include frequency fluctu...

A new approach for estimating motion in microfluidic flows is presented. Is is based on an extension of the brightness changes constraint equation (BCCE) to incorporate Taylor dispersion. This extended BCCE is then used for accurately estimating fluid flows in a two dimensional Molecular Tagging Velocimetry (2D-MTV) framework. Reference measurements were conducted to validate the accuracy and a...

In this paper mathematical models are proposed for calculating rotational speed, signal period, duty cycle and phase drift of gear tooth speed sensors with dual outputs. The proposed mathematical models are applied to parameter determination/optimization and target wheel design of Hall Effect gear tooth sensors and measuring systems. Experiment results show that the mathematical models are very...

Bias Temperature Instability (BTI) causes significant threshold voltage shift in MOSFET using Hafnium-dioxide (HfO2) High-k dielectric material. Negative BTI and Positive BTI are two types of BTI effects observed in p-channel and n-channel MOSFET. BTI affects the stability and reliability of conventional six transistor (6T) SRAM design in nano-scale CMOS technology. Eight transistor (8T) and Te...

In this paper, we present a fast and accurate method for the combined detection and interactive visualization of vortex structures in 3D flow and their corresponding velocity field. Vortex surfaces are extracted by identifying vortex core lines in combination with isosurfaces of λ2. The velocity field on those vortex surfaces is visualized by a surface LIC method that works in image space. An e...

It was indeed an extremely well organized Congress; almost a full week filled with a multiplicity of organizational details accompanied by food, flowers and elegance coupled with the warmth of the Taiwanese organizers, although a few of us from northern climes were sweltering in the warm and humid weather. We found it especially warm at the lunches provided as voluminous buffets , served under ...

In biological fluid mechanics powerful image acquisition systems which guarantee biocompatibility are required for making progress towards a better understanding of natural phenomena being optimized by evolution in nature. For this advanced evaluation methods enabling the sophisticated analysis and description of flow fields are also necessary. In the present contribution, a novel so called neu...