نتایج جستجو برای: گشتل ge stell

تعداد نتایج: 20063  

Journal: :Annals of oncology : official journal of the European Society for Medical Oncology 2011
J-H Chen S Chan D H-E Chang M Lin M-Y Su

Sub #1 Sub #2 Sub #3 Sub #4 Breast Volume (BV, cc) GE 1.5 421 216 272 234 GE 3.0 463 224 291 227 Siemens 1.5 441 219 287 238 Philips 3.0 451 226 290 247 Variation 4.0 (%) 2.1 (%) 3.0 (%) 3.5 (%) Fibroglandular Tissue Volume (FV, cc) GE 1.5 62.9 56.1 80.7 67.6 GE 3.0 65.4 53.0 89.8 70.0 Siemens1.5 65.7 49.3 84.6 60.8 Philips 3.0 71.5 57.0 94.8 64.6 Variation 5.5 (%) 6.5 (%) 7.0 (%) 6.0 (%) Perce...

2012
Seishi Abe

This paper investigates the crystal structure and optical absorption of Ge-doped Nb-oxide (Nb-Ge-O) thin films prepared by RF sputtering. A wide-gap material, Nb2O5, is selectively produced as a matrix to disperse Ge nanocrystals through compositional optimization with Ge chip numbers and oxygen ratio in argon. The optical-absorption spectra are obviously shifted to visible (vis) and near-infra...

Journal: :The Journal of chemical physics 2006
Elisabeth Schöll-Paschinger Albert Reiner

In an effort to generalize the self-consistent Ornstein-Zernike approximation (SCOZA)-an accurate liquid state theory that has been restricted so far to hard core systems-to arbitrary soft core systems we study a combination of SCOZA with a recently developed perturbation theory. The latter was constructed by Ben-Amotz and Stell [J. Phys. Chem. B 108, 6877 (2004)] as a reformulation of the Week...

2016
J. Jotautas Baronas Douglas E. Hammond William M. Berelson James McManus Silke Severmann

In this study we have sampled the water column and sediments of the Gulf of Mexico to investigate the effects of high riverine terrigenous load and sediment redox conditions on the cycling of Ge and Si. Water column Ge/Si ratios across the Gulf of Mexico continental shelf range from 1.9 to 25 lmol/mol, which is elevated compared to the global ocean value of 0.7 lmol/mol. The Ge enrichment in th...

Journal: :Optics express 2015
Edward T Fei Xiaochi Chen Kai Zang Yijie Huo Gary Shambat Gerald Miller Xi Liu Raj Dutt Theodore I Kamins Jelena Vuckovic James S Harris

In this paper, we report a broad investigation of the optical properties of germanium (Ge) quantum-well devices. Our simulations show a significant increase of carrier density in the Ge quantum wells. Photoluminescence (PL) measurements show the enhanced direct-bandgap radiative recombination rates due to the carrier density increase in the Ge quantum wells. Electroluminescence (EL) measurement...

Journal: :ACS applied materials & interfaces 2011
Hung-Chi Wu Bi-Hsuan Lin Huang-Chin Chen Po-Chin Chen Hwo-Shuenn Sheu I-Nan Lin Hsin-Tien Chiu Chi-Young Lee

Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 < x < 1) graded buffer layer was demonstrated through a facile chemical vapor deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray ...

2007
J. I. GOLDSTEIN

Ge distributions in ten iron meteorites with bulk Ge contents of 8.7 to 2000 ppm have been measured by electron probe microanalysis. Ge is concentrated almost entirely in the metallic phases. It was redistributed in the temperature range at which the Widmanstatten pattern developed. Ge content shows a positive correlation with Ni content, reaching a maximum in taenite and a minimum in kamacite ...

2015
J. Perrin Toinin K. Hoummada M. Texier M. Bertoglio S. Bernardini L. Chow

5 10 Teþ ions cm 2 were implanted in an Ge(001) substrate using an industrial implanter with a Teþ beam energy of 180 keV. In addition to usual implantation-mediated defects observed in Ge with usual dopants, Te implantations lead to the formation of amorphous surface GeO clusters exhibiting micrometer scale sizes, as well as deep extended defects. Implantation defects promote the formation of ...

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