We report here, the results of molecular dynamics simulation of p-doped (Ga-face)GaN over n-doped (Siface)(0001)4H-SiC hetero-epitaxial material system with one-layer each of Ga-flux and (Al-face)AlN, as the interface materials, in the form of, the total Density of States (DOS). It is found that the total DOS at the Fermi-level for the heavily p-doped (Ga-face)GaN and ndoped (Si-face)4H-SiC het...

SiC reinforced Aluminum samples were produced by stir casting of liquid AA1200 aluminum alloy at 600-650oC casting temperature. 83μm SiC particles were rinsed in 10g/l, 20g/l and 30g/l molar concentration of Sncl2 through cleaning times of 0, 60, 120, and 180 minutes. Some cast samples were tested for mechanical properties and some were subjected to heat treatment before testing. The SnCl2 rins...

The heat treatments have been designed to vary the matrix microstructure in P/M processed SiC reinforced 7xxx Aluminum alloys to determine the effects of matrix microstructure, interface behavior on the mechanical properties. Smooth tensile, notched bend tests were performed. The results conclude that the clustered regions have been observed as preferred initiation sites in both tensile and not...