In this work we investigate the synthesis of Bragg reflectors consisting either of AlN/GaN or of (Al,In)N/GaN by plasma-assisted molecular beam epitaxy (MBE). In addition, we study the impact of Si-doping on the surface morphology and the structural and electrical properties of AlN/GaN Bragg reflectors in order investigate the feasibility of obtaining vertically conducting Bragg mirrors. The st...

Using epitaxial aluminum nitride (AlN) developed for ultraviolet photonics and high-speed electronics, we demonstrate suspended AlN thin-film bulk acoustic resonators (FBARs) at 9.2 GHz in the X-band (8–12 GHz) of microwave spectrum. The show a Qmax≈614 figure merit f⋅Q≈5.6 THz. material stack these epi-AlN FBARs allows monolithic integration with AlN/GaN/AlN quantum well high-electron-mobility...

Bisphosphonates such as alendronate and zoledronate are blockbuster drugs used to inhibit osteoclast-mediated bone resorption. Although the molecular mechanisms by which bisphosphonates affect osteoclasts are now evident, the exact route by which they are internalized by cells is not known. To clarify this, we synthesized a novel, fluorescently labeled analog of alendronate (AF-ALN). AF-ALN was...

Polymer modified fillers in composites has attracted the attention of numerous researchers. These fillers are composed of core-shell structures that exhibit enhanced physical and chemical properties that are associated with shell surface control and encapsulated core materials. In this study, we have described an apt method to prepare polyimide (PI)-modified aluminum nitride (AlN) fillers, AlN@...

We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite ~WZ! and zinc-blende ~ZB! crystal structures, as well as strained WZ GaN/AlGaN quantum dots. We show that the strain field significantly modifies the conductionand valence-band edges of GaN quantum dots. The piezoelectric field is found to govern excitonic properties of WZ GaN/AlN quantum dots, while it h...

This work is part of a project that studies the implementation of neural network algorithms in reconfigurable hardware as a way to obtain a high performance neural processor. The results for Adaptive Logic Network (ALN) type binary networks with and without learning in hardware are presented. The designs were made on a hardware platform consisting of a PC compatible as the host computer and an ...

BACKGROUND AND PURPOSE CT angiography (CTA) and MR angiography (MRA) are increasingly used methods for evaluation of stented vessel segments. Our aim was to compare CTA, contrast-enhanced MRA (CE-MRA) at 1.5T, and CE-MRA at 3T for the visualization of carotid artery stents and to define the best noninvasive imaging technique as an alternative to conventional angiography for each stent. MATERI...

GaN-based high-electron mobility transistors (HEMTs) with AlN/GaN super-lattices (SLs) (4 to 10 periods) as barriers were prepared on (0001) sapphire substrates. An innovative method of calculating the concentration of two-dimensional electron gas (2-DEG) was brought up when AlN/GaN SLs were used as barriers. With this method, the energy band structure of AlN/GaN SLs was analyzed, and it was fo...