نتایج جستجو برای: فناوری cmos
تعداد نتایج: 36482 فیلتر نتایج به سال:
We develop mathematical switch-level models for static combinational CMOS networks. In contrast to other dVdihbk MOS models and theories, our models capture design principles that are special to CMOS, such as the use of transmission gates. First we study networks consisting of cascade connections of CMOS cells realizing negative functions. We then extend this model to incorporate transmission g...
A active inductor in CMOS techonology with a supply voltage of 1.8V is presented. The value of the inductance L can be in the range from 0.12nH to 0.25nH in high frequency(HF). The proposed active inductor is designed in TSMC 0.18-um CMOS technology. The power dissipation of this inductor can retain constant at all operating frequency bands and consume around 20mW from 1.8V power supply. Induct...
This paper reviewed the technologies that enable Charge-Coupled Device based and CMOS photodiode based image sensors. The advantages and disadvantages of the two types of sensors were presented. It was concluded that in the near future, both types of sensors would continue to play a role in the imaging industry. High image quality applications would continue to demand ChargeCoupled Devices ba...
This work reports on a heterogeneous integration of resistive memories into the Back-End-of-the-Line of 180 nm standard CMOS foundry chips. A TaOx-based ReRAM technology with materials and processes fully CMOS compatible has been developed and characterized. A low-cost integration method is applied to the developed TaOx-based memories to achieve chip level ReRAM–CMOS integration. The integrated...
Bandgap Reference voltage chip is implemented in 0.25μm CMOS technology with ESD protection. This chip can be designed by using a layout tool micro wind 3.1.7 version. The chip circuit generates a reference voltage of 1.23 V. It can operate between 20oC & 70oC temperature. Band gap core produces a voltage that is insensitive to variation in temperature. It has a unique protection with respect t...
We present a 12.5-Gb/s monolithically integrated optical receiver with CMOS avalanche photodetector (CMOS-APD) realized in 65-nm CMOS technology. The optical detection bandwidth limitation of CMOS-APD due to the carrier transit time is compensated by underdamped TIA. With this optical receiver, 12.5-Gb/s 850-nm optical data are successfully detected with bit-error rate less than 10 at the incid...
– This paper is about the design, simulation and study of a CMOS quaternary logic generator having a single stage CMOS body driven design. The interest of design is that the circuit consists of only one CMOS circuit, reducing the chip area and also only two supply rails is required to drive the complete circuitry. The multi-valued logic generator, designed here is also demonstrated with and wit...
This paper reports on the investigation of charge-transfer noise and lag in CMOS image sensors. Noise and lag are analyzed for buried-photodiode CMOS active-pixel-sensor (APS) devices using a simple Monte-Carlo technique. Since the main mechanism of charge-transfer noise involves carrier emission over a barrier, the results are applicable to the soft reset of photodiode-type CMOS APS devices, a...
This paper describes the design of a novel CMOS binary fulladder structure which incorporates four-valued signalling internally. A biased CMOS pseudo-lineaadder provides a quaternary signal representing the number of ones in the three binary inputs. Three area-ratioed CMOS inverters interpret this to provide three binary signals which, combined in conventional static CMOS logic, generate the su...
A monolithically integrated micro-fluidic biosensor system-on-chip (μBio-SSoC) is first realized in standard CMOS processes. This μBio-SSoC is composed of a CMOS-based microfluidic pump, a polysilicon nanowire (SiNW) biosensor, and driving circuits. With 1.5V driving voltage, the microfluidic pump drives sample-liquids to biosensing area with 34 μm/s flowing velocity. After pumping, the detecti...
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