Resistive switching random access memories are being thoroughly studied as prospective non-volatile memories. In this paper, we report electrical characterization of HfO2:Al2O3based metal-insulator–metal structures devised using atomic layer deposition. Dependences behavior on HfO2:Al2O3 cycle ratio is studied. An explanation for the differences between Switching properties samples proposed, ba...

Effects of Si3N4 trapping layer (NTL) and HfO2/Si3N4 bandgap-engineered trapping layer (BETL) on junctionless (JL) polycrystalline-based flash memory devices are investigated in this work. The programming speed is clearly improved by BETL but the erasing speed is only slightly improved. JL device with BETL performs better retention characteristics since the conduction band offset between Si3N4 ...

Owing to their prominent stability and CMOS compatibility, HfO2-based ferroelectric films have attracted great attention as promising candidates for ferroelectric random-access memory applications. A major reliability issue for HfO2 based ferroelectric devices is fatigue. So far, there have been a few studies on the fatigue mechanism of this material. Here, we report a systematic study of the f...

In this letter, we report on the obtention of hafnium oxide (HfO2) nanostructures by the microwavehydrothermal method. These nanostructures were analyzed by X-ray diffraction (XRD), field-emission gum scanning electron microscopy (FEG-SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectrometry (EDXS), ultraviolet–visible (UV–vis) spectroscopy, and photoluminescence (PL) m...

This paper reports the design and characterization of partially-filled-gap capacitive MEMS resonators for distributed mass sensing applications. By filling the gap with HfO2, the coupling coefficient between electrode-resonator increases by ×6.67 times and the motional resistance decreases by ×12 times in comparison with its counterpart in air. An improvement by a factor of ×5.6 in the Signal-T...

To fabricate high-performance GaN MIS-HEMTs, we have employed a novel SiNx/HfO2 dual gate insulator. A PEALD technique was used for very thin high quality SiNx (5 nm) as an interfacial layer, followed by RFsputtered HfO2 as a high-k dielectric for the second gate insulator structure. As a result, we have achieved excellent characteristics such as small subthreshold slope of 85 mV/dec, extremely...

Standard nitride recipes for Savannah were tried first. Woollam M2000 spectroscopic ellipsometer (Woollam) and SSI SProbe X-Ray Photoemission Spectrometer (XPS) were used for thickness and composition measurements. However, the results were undesirable. For example, the results of Woollam showed that Hf3N4 films with 500, 375, and 250 cycles well matched to the corresponding HfO2 models. Furthe...