A recently developed formula for the Hall coefficient [A. Auerbach, Phys. Rev. Lett. 121, 66601 (2018)] is applied to nodal line and Weyl semimetals (including graphene), spin-orbit split semiconductor bands in two three dimensions. The calculation reduces a ratio of equilibrium susceptibilities, where corrections are negligible at weak disorder. Deviations from Drude's inverse carrier density ...
