Abstract When silicon-on-insulator p-type MOSFET (SOI-PMOS) functions like a capacitor-less 1T-DRAM cell, it is possible for the number of electrons to be sensed at cryogenic temperatures (5 K). We developed structure that combines n-type MOSFETs (SOI-NMOS) and SOI-PMOS with multiple gates form silicon quantum-dot array. In this structure, variable injected into body by means bucket-brigade ope...

The worst ease bias during total dose irradiation of partially depleted SOI transistors from two technologies is correlated to the device architecture. Experiments and simulations are used to analyze SOI back transistor threshold voltage shift and charge trapping in the buried oxide

The backreflection in commonly used grating couplers on silicon-on-insulator (SOI) is not negligible for many applications. This reflection is dramatically reduced in our improved compact grating coupler design, which directs the reflection away from the input waveguide. Realized devices on SOI show that the reflection can be reduced down to -50 dB without an apparent transmission penalty.

This paper reviews the recent advances in SOI digital CMOS circuits. Particular emphases is placed on the impact of floating-body in partially-depleted devices on the circuit operation, stability, and functionality. Unique SOI design aspects such as parasitic bipolar effect and hysteretic VT variation are addressed. Circuit techniques to improve the noise immunity and global design issues are a...

An important effect on the dynamics of spins in materials is the spin-orbit interaction (SOI), which reflects/arises from intrinsic lack of inversion symmetry in the lattice structure, or via broken symmetries in the system due to external or interfacial fields (Rashba interaction). Although intrinsic SOI is weak in graphene, the Rashba SOI can in fact be large due to strong local hybridization...

Conduction band modification due to shear stress is investigated. Mobility in singleand double-gate SOI FETs is modeled for Silicon thin body orientation (001) and (110) under general stress conditions. Decrease of conductivity mass induced by uniaxial [110] tensile stress leads to mobility enhancement in the stress direction in ultra-thin body SOI MOSFETs.

BACKGROUND Patients hospitalized for chronic obstructive pulmonary disease (COPD) exacerbations carry a high risk for early rehospitalization. We wished to identify the basic clinical factors associated with a high risk of rehospitalization, and to see how well the standardized All Patient Refined Diagnosis Related Group (APR-DRG) severity of illness (SOI) subclassification predicted rehospital...

Silicon-on-insulator (S01) technology exhibits three main advantages over bulk silicon technology for use in radiation environments. (1) SOI devices are immune to Iatchup, (2)the volume of the sensitive region (body) and hence total charge collection per transient irradiation is much reduced in SOI devices and (3) the insulating layer blocks charge collection from the substrate (i.e., no fimnel...

In this paper the error in estimating the conditional distribution of rainfall given a particular pre-existing or coexisting southern oscillation condition due to the limited length of the historical record is investigated and some statistical procedures for reducing this error are proposed and investigated. Introduction Rainfall in Australia appears to be influenced by the El-Nino/Southern Osc...