Plain English summary Two years ago we launched Research Involvement and Engagement (RIE) as an interdisciplinary co-produced journal, focusing on patient and wider involvement and engagement in all stages of health and social care research. In this Editorial we reflect on progress and consider future directions. Now indexed in PubMed Central, RIE's prime objective is to publish papers that rep...

BACKGROUND Oxidative stress and inflammation may contribute to the disruption of the protective gut barrier through various mechanisms; mitochondrial dysfunction resulting from inflammatory and oxidative injury may potentially be a significant source of apoptosis during necrotizing enterocolitis (NEC). Tumor necrosis factor (TNF)-alpha is thought to generate reactive oxygen species (ROS) and ac...

Uniform arrays of nano-sized pore produced in porous alumina were transferred into InP substrates by inductively coupled plasma reactive ion etching (ICP-RIE). We observed a significant enhancement in the light output from InP substrate with nanohole arrays on the surface. Photoluminescence intensity of triangular arrays of air cylinders on InP substrate showed an enhancement up to 3 times comp...

Introduction: One of the many challenges IC manufacturing faces with the advancement of technology nodes is reactive ion etching [RIE] of dielectric materials to produce smaller feature with higher aspect ratios. Compounding the difficulty is the introduction of 193 nm photoresist materials, whose chemical composition makes them less resistant to RIE and their depth of focus requires the use of...

We have demonstrated lithography-free, simple, and large area fabrication method for subwavelength antireflection structures (SAS) to achieve low reflectance of silicon (Si) surface. Thin film of Pt/Pd alloy on a Si substrate is melted and agglomerated into hemispheric nanodots by thermal dewetting process, and the array of the nanodots is used as etch mask for reactive ion etching (RIE) to for...

In this work a comparison between plasma-induced defects by two different SF6 texturing techniques, reactive ion etching (RIE) and high-density plasma (HDP) is presented. It is found that without any defect-removal etching (DRE), the minority carrier lifetime is the highest for the HDP technique. After DRE, the minority carrier lifetime rises as high as 750 ms for both RIEand HDP-textured wafer...