نتایج جستجو برای: zno thin films
تعداد نتایج: 197251 فیلتر نتایج به سال:
Thin ( ~ 1/xm) crystalline ZnO films with a good optical quality and a good (0002) texture are grown under two considerably different process parameter sets using a r.f. planar magnetron sputtering unit. The optical parameters of the two corresponding ZnO layers are distinctly different: high refractive index ( 2.0 at A = 632.8 nm) ZnO films resembling the single crystal form, and ZnO films wit...
the improvement of the physical properties of indium tin oxide (ito) layers is quite advantageous in photovoltaic applications. in this study the ito film is deposited by rf sputtering onto p-type crystalline silicon (c-si) with (100) orientation, multicrystalline silicon (mc-si), and glass substrates coated with zno and annealed in vacuum furnace at 400°c. electrical, optical, structural and m...
In this report, ultraviolet (UV) detectors were fabricated based on zinc oxide thin films. The epitaxial growth of zinc oxide thin films was carried out on bare glass substrate with preferred orientation to (002) plane of wurtzite structure through radio frequency sputtering technique. The structural properties indicated a dominant peak at 2θ=34.28º which was matched with JCPDS reference card N...
ZnO thin films were prepared on glass substrates at low (5 × 10-4 mbar) and high (3 × 10-3 mbar) sputter pressure using dc reactive magnetron sputtering. The structural, morphological, compositional and optical properties of the thin films were investigated. XRD patterns of both films confirmed the polycrystalline nature of the films with hexagonal Wurtzite structure. SEM study indicates that t...
Chemical bath deposition of ZnO thin films using six different complexing agents, namely ammonia, hydrazine, ethanolamine, methylamine, triethanolamine and dimethylamine, is investigated. As-grown films were mainly ZnO2 with a band gap around 4.3 eV. Films annealed at 400 ◦C were identified as ZnO with a band gap around 3.3 eV. X-ray diffraction and micro-Raman spectroscopy revealed that as-gro...
ZnO is a wide bandgap semiconductor that has many potential applications including solar cell electrodes, transparent thin film transistors and gas/biological sensors. Since the surfaces of ZnO materials have no amorphous or oxidized layers, they are very environmentally sensitive, making control of their semiconductor properties challenging. In particular, the electronic properties of ZnO nano...
In this paper we report on the use of aerosol assisted chemical vapour deposition (AACVD) to form thin films of the zinc titanate phases using zinc acetate and titanium isopropoxide as precursors in methanol solution. Analysis by XRD and XPS found that through variation in experimental conditions we have been able to synthesize films of zinc titanate with composition of Zn2TiO4 or Zn0.3Ti2.7O4....
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ZnO photoanodes for dye sensitized solar cell were sythesized by using sol-gel spin coating method. XRD pattern confirmed that ZnO film was crystalline in nature and crystallite size calculated was 45.8 nm. The grain size measured form SEM image of ZnO film was 66.6 nm. Transmission of thin film was observed 75-92% in wavelength range from 400-800nm. The photon to electron conversion effiecienc...
Using monochromated electron energy loss spectroscopy in a probe-corrected scanning transmission electron microscope we demonstrate band gap mapping in ZnO/ZnCdO thin films with a spatial resolution below 10 nm and spectral precision of 20 meV.
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