Single phase Eu doped GdMnO3 ceramics were prepared using solid state reaction route. Several different characterization techniques were used to investigate the structural and magnetic properties of the samples, including X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDX) and Vibrating Sample Magnetometer (VSM). All samples indicated single p...

X-ray diffraction (XRD) analysis is a fundamental method to evaluate the carbon stacking structure in coal and carbon materials. However, the vagueness of XRD pattern of coal, which has the low crystallinity, often makes it difficult to evaluate the stacking structure quantitatively. In a previous study [1,2], we reported the standard analysis of carbon stacking structure in coal by XRD techniq...

A new method for the single crystal growth of rare-earth monopnictide DySb by self-flux technique is reported. Detailed structural, transport and magnetic characterisation has been carried out using X-ray diffraction (XRD), High resolution (HRXRD), resistivity magnetisation measurements, respectively. The Rietveld refinement powder XRD pattern reveals that grown in phase crystallises space grou...

Cellulose-silica composite fiber samples have been successfully synthesized using cellulose solution, tetraethoxysilane, and NH3•H2O in ethanol/water mixed solvents at room temperature for 24 h. The cellulose solution was previously prepared by the dissolution of microcrystalline cellulose in a solvent mixture of N,N-dimethylacetamide (DMAc)/lithium chloride (LiCl). The effect of the tetraethox...

High-resolution transmission electron microscopy (HRTEM) measurements of the thickness of white mica crystallites were made on three pelite samples that represented a prograde transition from diagenetic mudstone though anchizonal slate to epizonal slate. Crystallite thickness, measured normal to (001), increases as grade increases, whereas the XRD measured 10 ~ peakprofile, the Kubler index, de...

Properties of metalorganic vapor phase epitaxy (MOVPE) grown GaN bulk layers with varying GaN buffer growth conditions are characterized by low-temperature (6K) photoluminescence (LT-PL) and Xray diffraction (XRD). Full width at half-maximum (FWHM) of the near-bandedge emission of undoped layers is between 4.9 and 10meV, exhibiting no distinct dependence on buffer growth conditions. PL as well ...