نتایج جستجو برای: vertical channel

تعداد نتایج: 315244  

Journal: :TELKOMNIKA (Telecommunication Computing Electronics and Control) 2009

2002
P. W. Langhoff T. N. Rescigno V. McKoy Arthur Amos Noyes

Theoretical investigations of total and partial-channel photoabsorption cross sections in molecular formaldehyde are reported employing the Stieltjes-Tchebycheff (s-T) technique and separated-channel static-exchange (!YO) calculations. Vertical one-electron dipole spectra for the 2b 2(n), lb 1(7T), 5a1(a), I b2, and 4a 1 canonical molecular orbitals are obtained using Hartree-Fock frozen-core f...

2001
Xuejue Huang Wen-Chin Lee Charles Kuo Digh Hisamoto Erik Anderson Hideki Takeuchi Yang-Kyu Choi Kazuya Asano Vivek Subramanian Jeffrey Bokor Chenming Hu

High-performance PMOSFETs with sub-50–nm gate-length are reported. A self-aligned double-gate MOSFET structure (FinFET) is used to suppress the short-channel effects. This vertical double-gate SOI MOSFET features: 1) a transistor channel which is formed on the vertical surfaces of an ultrathin Si fin and controlled by gate electrodes formed on both sides of the fin; 2) two gates which are self-...

2011
S. Mergui S. Hirata

Experimental and numerical studies of steady longitudinal convection rolls that develop in a Poiseuille air flow in a rectangular channel heated from below and cooled from the top are conducted in the range 3500 ≤ Ra ≤ 6000 and 20 ≤ Re ≤ 200. The effect of the lateral vertical walls on the onset and development of the convection cells is investigated by changing the transverse aspect ratio of t...

2014
Michael Barth Huichu L. Liu Ze Yuan Archana Kumar Hap Hughes Patrick J. McMarr Jeffrey H. Warner J. Brad Boos Dale McMorrow Brian R. Bennett Vijaykrishnan Narayanan Enxia X. Zhang C. X. Zhang Suman Datta Krishna C. Saraswat

In this paper we present the effect of ionizing radiation on n and p-channel Antimonide based (Sb) based Quantum Well-Metal-Oxide-Semiconductor-Field-Effect Transistor (QW-MOSFETs). QW-MOSFET's were fabricated on n-channel InAsSb QW and p-channel InGaSb QW and then exposed to ionizing radiation. The n-channel InAsSb QW shows higher radiation sensitivity than the pchannel InGaSb QW due to enhanc...

2011
Thomas Groß Sebastian Mödersheim

The security of key exchange and secure channel protocols, such as TLS, has been studied intensively. However, only few works have considered what happens when the established keys are actually used—to run some protocol securely over the established “channel”. We call this a vertical protocol composition, and it is truly commonplace in today’s communication with the diversity of VPNs and secure...

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