نتایج جستجو برای: unilateral transistor model
تعداد نتایج: 2155669 فیلتر نتایج به سال:
As we move towards the end of the technology roadmap, and potentially to newer technology flavors besides conventional CMOS, transistor defect rates are expected to increase significantly. Till recently, industry has dealt with defects (including both manufacturing defects and defects at run-time) using conservative approaches discarding non-functioning chips at test time and extensive guardban...
Critical Delay (ns) min width opt width 2bit 66 6.82 Table 1. Critical delay comparison between the minimum-width solution and the optimal-width solution. Table 2. Critical delay comparison among minimal sizing scheme, transistor sizing only, and the STIS solution. the maximum number of the possible evaluations for any xi(i = f1; ; ng), the LRA scheme will converge in the polynomial time O(r n ...
In this paper, a compact model for the double-gate Reconfigurable Field-Effect Transistor (RFET) is presented. Firstly, physics-based surface potential derived by solving Poisson's equation at different channel regions. Then an explicit expression of drain current analytically obtained based on theory band-to-band tunneling Schottky junction. The proposed shows excellent agreement with TCAD sim...
Twenty eight rabbits were trained to discriminate striated patterns of different orientation, first binocularly, than with each eye separately. There was no evidence of systematic dominance of either the left or the right hemisphere.
By electrochemically p-doping pentacene in the vicinity of the source-drain electrodes in organic field effect transistors the injection barrier for holes is decreased. The focus of this work is put on the influence of the p-doping process on the transistor performance. Cyclic voltammetry performed on a pentacene based transistor exhibits a reversible p-doping response. This doped state is evok...
We present a single-transistor pixel for CMOS image sensors (CIS). It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to obtain analytical description of conversion gain. Model validation has been done by comparing theor...
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