The electron field emission properties of the nanodiamond films were examined using scanning tunneling microscopic sSTMd technique. Current image tunneling spectroscopic measurements reveal the direct dependence of electron tunneling/field emission behavior of the films on the proportion of grain boundaries present. Local tunneling current-voltage sIt–Vd measurements show that incorporation of ...

– We compute the width and shape of the EPR and tunneling resonances due to dislocations in Mn-12 acetate crystals. Uncorrelated dislocations produce the Gaussian shape of resonances while dislocations bound in pairs produce the Lorentzian shape. We stress that the uniaxial spin Hamiltonian together with crystal defects can explain the totality of experimental data on Mn-12. The discovery of re...

Quantum tunneling between two potential wells in a magnetic field can be strongly increased when the potential barrier varies in the direction perpendicular to the line connecting the two wells and remains constant along this line. An oscillatory structure of the wave function is formed in the direction joining the wells. The resulting motion can be coherent like motion in a conventional narrow...

Unidirectional multi-resonant tunneling of the magnetoelectric (ME) field excitations through a subwavelength (regarding the scales of regular electromagnetic radiation) vacuum or isotropicdielectric regions has been observed in two-port microwave structures having a quasi-2D ferrite disk with magnetic dipolar mode (MDM) oscillations. The excitations manifest themselves as Fano-resonance peaks ...

The low field magnetotransport of La0.7Sr0.3MnO3 (LSMO) films grown on SrTiO3 substrates has been investigated. A high qualtity LSMO film exhibits anisotropic magnetoresistance (AMR) and a peak in the magnetoresistance close to the Curie temperature of LSMO. Bi-epitaxial films prepared using a seed layer of MgO and a buffer layer of CeO2 display a resistance dominated by grain boundaries. One f...

The time evolution of the quantum entropy in a coherently driven threelevel quantum dot (QD) molecule is investigated. The entanglement of quantum dot molecule and its spontaneous emission field is coherently controlled by the gat voltage and the intensity of applied field. It is shown that the degree of entanglement between a three-level quantum dot molecule and its spontaneous emission fields...

We present temperature dependent electrical measurements on n-type InAs/InSb nanowire heterostructure field-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment. A clear asymmetry is observed when applying a bias to either the InAs or the InSb side of the junction. Impact ionization and band-to-band tunneling i...