Metal–organic chemical vapor deposition (MOCVD) is one of the best growth methods for GaN-based materials as well-known. with very quality are grown MOCVD, so we used this technique to grow InAlN/GaN and AlN/GaN heterostructures in study. The structural surface properties ultrathin barrier studied by X-ray diffraction (XRD) atomic force microscopy (AFM) measurements. Screw, edge, total dislocat...

The low-frequency LF noise performance of nand p-channel metal-oxide-semiconductor field-effect transistors MOSFETs with different Hf-based gate oxides, deposited by metallorganic chemical vapor deposition MOCVD on the same interfacial oxide layer and using polysilicon poly-Si as a gate material has been investigated. Independent of the gate oxide, the LF noise spectra of nand p-MOSFETs are pre...

1-D nanostructures, such as nanowires and nanotubes, have been extensively studied due to their potentials as building blocks for fabricating electronic, magnetic, electrooptic, and electrochemical nanodevices. Especially, wide-bandgap semiconductor nanowires and nanorods including ZnO and SnO2 were reported significantly. As for their synthetic routes, a carbothermal reduction process has been...

The use of wide bandgap materials for broadcast telecommunication and defense systems allow high power, high efficiency and high integration levels of active devices thanks to their microwave electrical performances. GaN based devices have also demonstrated great potential for high frequency linear low noise applications. However, low frequency noise (LFN) performances characteristics are still...

We fabricated a new organic-inorganic hybrid superlattice film using molecular layer deposition [MLD] combined with atomic layer deposition [ALD]. In the molecular layer deposition process, polydiacetylene [PDA] layers were grown by repeated sequential adsorption of titanium tetrachloride and 2,4-hexadiyne-1,6-diol with ultraviolet polymerization under a substrate temperature of 100°C. Titanium...

We report the growth of high-quality GaN layer on single-walled carbon nanotubes (SWCNTs) and graphene hybrid structure (CGH) as intermediate layer between GaN and sapphire substrate by metal-organic chemical vapor deposition (MOCVD) and fabrication of light emitting diodes (LEDs) using them. The SWCNTs on graphene act as nucleation seeds, resulting in the formation of kink bonds along SWCNTs w...

We have implemented coherent gradient sensing (CGS) as an in-situ diagnostic in an MOCVD reactor to measure curvature and changes in curvature with varying temperature and O2 partial pressure on thin ̄lm YBCO on MgO (001) substrates. CGS is a novel, real-time, full̄eld optical technique that provides a direct map of the components of the curvature tensor across the surface of the wafer. We have ...

This paper reports the first successful demonstration of large-size free-standing single-crystal ?-Ga2O3 NMs fabricated by hydrogen implantation and lift-off process directly from MOCVD grown epifilms on native substrates.

A chemistry-based approach to designing precursors for the deposition of inorganic films requires consideration of the physical properties of the precursor compound (e.g., volatility for transport in the reactor) and its probable decomposition pathways, both in the gas phase and on the surface during growth. We have been using Aerosol-Assisted Chemical Vapor Deposition of tungsten carbonitride ...

An optical characterization technique is proposed for GaN based compounds deposited on sapphire. In AlGaN films grown by MOCVD, the film optical behavior and the substrate to layer interface are qualified from the measured optical data. The experimental and theoretical approach used for this purpose is described in detail. The results clearly show bending effects at the interface which may be r...