نتایج جستجو برای: sub threshold circuits

تعداد نتایج: 384663  

2002
Ali Chehab Rafic Z. Makki Michael Spica David Wu

In this paper, we investigate three iDDT-based test methodologies, Double Threshold iDDT, Delta iDDT, and Delayed iDDT, and we compare their effectiveness in the detection of defects in very deep sub-micron random logic circuits. The target defects are resistive opens and resistive bridges. We present preliminary simulation results of 49 defects to study the defect sensitivity of each of the th...

1996
Bedabrata Pain Eric R. Fossum

Design and operation of high-gain (>1000), low-power (< 75 jtW), ultra low-noise amplifier arrays are presented. The amplifier array is operated in self-biased mode, such that all amplifiers are biased irrespective of threshold mismatches, and operate with low reset noise. The amplifiers are designed for possible incorporation as pixels of hybrid solid-state photon-counting sensor. The cell pit...

Journal: :SIAM Journal on Discrete Mathematics 1991

Journal: :Journal of Graph Algorithms and Applications 2016

2017
Emanuel P. Haglund Sulakshna Kumari Johan S. Gustavsson Erik Haglund Gunther Roelkens Roel G. Baets Anders Larsson

The hybrid vertical-cavity laser is a potential low current, high-efficiency, and small footprint light source for silicon photonics integration. As part of the development of such light sources we demonstrate hybrid-cavity VCSELs (HC-VCSELs) on silicon where a GaAs-based half-VCSEL is attached to a dielectric distributed Bragg reflector on silicon by adhesive bonding. HC-VCSELs at 850 nm with ...

2010

The steep sub-threshold characteristics of inter-band tunneling FETs (TFETs) make an attractive choice for low voltage operations. In this work, we propose a hybrid TFETCMOS chip multiprocessor (CMP) that uses CMOS cores for higher voltages and TFETs for lower voltages by exploiting differences in application characteristics. Building from the device characterization to design and simulation of...

1994
Mikael Goldmann Marek Karpinski

We prove that a single threshold gate with arbitrary weights can be simulated by an explicit polynomial-size depth 2 majority circuit. In general we show that a depth d threshold circuit can be simulated uniformly by a majority circuit of depth d + 1. Goldmann, H astad, and Razborov showed in 10] that a non-uniform simulation exists. Our construction answers two open questions posed in 10]: we ...

2011
Liang Zhou

In the literature, some schemes were proposed to combine Multi-Threshold CMOS (MTCMOS) with asynchronous circuits to reduce standby power consumption. However, all of these can only be applied to asynchronous circuits in which the values of all signals can be determined in the standby state. As a result, their applications are limited. To solve this problem, this paper develops standby power re...

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