Crystalline yttria-stabilized zirconia oxide (YSZ) film was successfully deposited on a silicon wafer without an interfacial amorphous SiO2 layer. The film with equivalent oxide thickness teox down to 1.77 nm shows negligible hysteresis and low interface state density, less than 3 × 1011 cm−2 eV−1. The leakage current density for teox = 1.77 nm film, 1.5 × 10−5 A cm−2 at 1 V bias voltage, is fi...

mirage effect is contactless and non destructive method which has been used a lot to determine thermal properties of different  kind of samples , transverse photothermal deflection ptd in  skimming configuration with ccd camera  and special programs is used to determine thermal conductivity of porous silicon ps  film. ps samples were prepared by electrochemical etching. thermal conductivity wit...

Ultra-thin silicon dioxide films have been deposited on an oxygen-covered Mo(ll0) surface at room temperature by evaporating silicon in an oxygen background (1 X 10W5 Torr). The growth mechanism and structural properties of the 50, films were characterized with temperature programmed desorption, Auger electron, electron energy loss, and infrared reflection-absorption spectroscopies. The interac...

The effect of roughness on the dewetting behavior of polyethylene thin films on silicon dioxide substrates is presented. Smooth and rough silicon dioxide substrates of 0.3 and 3.2-3.9 nm root-mean-square roughness were prepared by thermal oxidation of silicon wafers and plasma-enhanced chemical vapor deposition on silicon wafers, respectively. Polymer thin films of approximately 80 nm thickness...

The wetting of silicon wafers and silicon wafers coated with alkylsiloxane monolayers by saturated vapors of cyclohexane and methanol were studied using x-ray specular reflection. Differentially heating the substrate surface relative to the temperature of a liquid reservoir was used to probe the disjoining pressure as a function of the film thickness and surface chemistry. Uncoated silicon wafe...

The processes for the neuronal microneedle are performed with only one ordinary double-polished (100) silicon wafer. The buried microchannel in the neuronal microneedle is fabricated using the processes of anisotropic dry etching, sidewall passivation, isotropic dry etching, and trench-refilling with a LPCVD polysilicon film. Because the microchannel fabrication process in this thesis uses the ...

In this paper, the influence of the atomic layer deposited alumina (Al2O3) thin films on the dynamics of a high-Q mechanical silicon oscillator was experimentally studied. The resonance frequency and Q value of uncoated oscillators used in this work were about f0 = 27 kHz and Q = 100 000 at p < 10−2 mbar and T = 300 K. Deposited alumina film thicknesses varied from 5 to 662 nm. It is demonstrat...

A novel ultrathin dual-layer film, which contained both bonded and mobile phases in ionic liquids (ILs) layer, was fabricated successfully on a silicon substrate modified by a self-assembled monolayer (SAM). The formation and surface properties of the films were analyzed using ellipsometer, water contact angle meter, attenuated total reflectance Fourier transform infrared spectroscopy, multi-fu...

We propose the use of bimetallic non-alloyed nanoparticles (BNNPs) to improve the broadband optical absorption of thin amorphous silicon substrates. Isolated bimetallic NPs with uniform size distribution on glass and silicon are obtained by depositing a 10-nm Au film and annealing it at 600°C; this is followed by an 8-nm Ag film annealed at 400°C. We experimentally demonstrate that the depositi...