In this article, we propose an improved multiple feedback successive interference cancellation (IMF-SIC) algorithm for symbol vector detection in multiple-input multipleoutput (MIMO) spatial multiplexing systems. The multiple feedback (MF) strategy in successive interference cancellation (SIC) is based on the concept of shadow area constraint (SAC) where, if the decision falls in the shadow reg...

OBJECTIVES Increased mortality from asthma, chronic bronchitis and emphysema has previously been reported among workers in the silicon carbide (SiC) industry. The objective of the present study was to evaluate the influence of specific exposure factors on mortality from obstructive lung diseases (OLD), using a newly revised job-exposure matrix. MATERIALS AND METHODS 1687 long-term workers emp...

For the first time, highly c-axis oriented heteroepitaxial AlN thin films have been successfully grown on epitaxial 3C-SiC films on Si (100) substrates. The AlN films deposited by the AC reactive magnetron sputtering at temperatures of approximately 300-450 °C were characterized using the scanning electron microscope (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and transmissio...

polar sea ice concentration (SIC) playing important roles in the global climatic and environmental studies. To evaluate the passive microwave SIC we observed sea ice with the 6 m-resolution, Electro-Optical Camera (EOC) sensor onboard KOMPSAT-1 satellite. A total of 72 cloud-free EOC images, 18 km x 18 km each, of arctic sea ice edges were obtained from July to August and 68 images across the a...

Being a true two-dimensional crystal, graphene possesses a lot of exotic properties that would enable unique applications. Integration of graphene with inorganic semiconductors, e.g. SiC promotes the birth of a class of hybrid materials which are highly promising for development of novel operations, since they combine the best properties of two counterparts in the frame of one hybrid platform. ...

This paper reviews recent developments in silicon carbide (SiC) single crystal wafer technology. The developments include the attainment of wafer diameters up to 100 mm and micropipes with densities less than 1 cm on 4H-SiC wafers with a diameter of 100 mm. Furthermore, high-quality SiC homoepitaxial thin film growth has been achieved, and owing to the availability of large high-quality epitaxi...

An analytical model for lateral MOSFET that includes the effects of temperature variation in 4Hand 6H-SiC poly-type is presented in this paper. SiC shows a tremendous potential for high temperature electronics applications [1-4]. The model includes the effects of temperature variation on the threshold voltage, the carrier mobility, the body leakage current, and the drain and source contact regi...

In [1], various model selection approaches were experimentally inter-compared; one of the considered model selection criteria was the Schwarz Information Criterion (SIC); however, SIC was incorrectly implemented. The same mistake has been repeated in other more recent papers. Here, we show why the SIC formula originally employed was wrong. We report instead the correct approach, which is well-k...