نتایج جستجو برای: sic nanoparticles

تعداد نتایج: 119981  

Journal: :Scientific reports 2016
Yufeng Zhang Nanying Lin Yaping Li Xiaodan Wang Huiqiong Wang Junyong Kang Regan Wilks Marcus Bär Rui Mu

ZnO/SiC heterojunctions show great potential for various optoelectronic applications (e.g., ultraviolet light emitting diodes, photodetectors, and solar cells). However, the lack of a detailed understanding of the ZnO/SiC interface prevents an efficient and rapid optimization of these devices. Here, intrinsic (but inherently n-type) ZnO were deposited via molecular beam epitaxy on n-type 6H-SiC...

2008
T. Nozawa A. Kohyama H. Tanigawa

Silicon carbide composites (SiC/SiC) are promising candidate materials for fusion reactors. For the practical application of this class of materials, a design basis for SiC/SiC composites needs to be developed because of inherent brittle-like fracture, i.e., quasi-ductility, which is totally different from ductility of metals. For this purpose, the failure behavior, i.e., matrix cracking behavi...

Journal: :Toxicology in vitro : an international journal published in association with BIBRA 2014
Delphine Boudard Valérie Forest Jérémie Pourchez Najih Boumahdi Maura Tomatis Bice Fubini Bernard Guilhot Michèle Cottier Philippe Grosseau

Silicon carbide (SiC) an industrial-scale product manufactured through the Acheson process, is largely employed in various applications. Its toxicity has been poorly investigated. Our study aims at characterizing the physico-chemical features and the in vitro impact on biological activity of five manufactured SiC powders: two coarse powders (SiC C1/C2), two fine powders (SiC F1/F2) and a powder...

2013
Shin-ichi Nishizawa Tomonori Ito Toru Akiyama Kohji Nakamura Bing Gao Koichi Kakimoto

SiC single crystal is usually grown by sublimation (modified Lely method). There is a lotof remaining issues that should be solved. One is the technical problems of SiC single crystal growth process. And the other is the theoretical problem based on SiC physical properties. As the example of technical issues, in this paper, the example of design optimization for SiC sublimation growth is descri...

2017
Sayan Seal Homer Alan Mantooth

This paper presents a vision for the future of 3D packaging and integration of silicon carbide (SiC) power modules. Several major achievements and novel architectures in SiC modules from the past and present have been highlighted. Having considered these advancements, the major technology barriers preventing SiC power devices from performing to their fullest ability were identified. 3D wire bon...

2013
Ren KIMURA Kousuke UCHIDA Toru HIYOSHI Mitsuhiko SAKAI Keiji WADA Yasuki MIKAMURA

Recently, energy saving is strongly required to prevent global warming. Electricity is the most common energy form and is necessary in our daily life and various activities, because it is comparatively easy to utilize in transmission and conversion after generation. Therefore, it is very important to reduce energy loss in electric power systems and improve their efficiency. The present power sy...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه تربیت دبیر شهید رجایی - دانشکده مهندسی مکانیک 1391

در این تحقیق نانو کامپوزیت sic- 3o2al با درصد حجمی 3%، 5%، 10% و 15% sicاز طریق مخلوط کردن میکرو پودر 3o2al و نانو پودر sic به روش زینتر بدون فشار در دمای ?c1750 ساخته شد. پودرهای آلومینا و کاربید سیلیسیم با یکدیگر بصورت سوسپانسیون آسیاب شدند. نمونه ها به روش پرس ایزو استاتیک سرد تولید شدند. نمونه ها در یک اتمسفر کنترل شده با گاز آرگون به روش زینتر بدون فشار در دمای ?c1750 زینتر شدند. خواص ریز ...

Journal: :Quantum Information & Computation 2007
Isaac H. Kim

C. A. Fuchs and M. Sasaki defined the quantumness of a set of quantum states in [1], which is related to the fidelity loss in transmission of the quantum states through a classical channel. In [4], Fuchs showed that in d-dimensional Hilbert space, minimum quantumness is 2 d+1 , and this can be achieved by all rays in the space. He left an open problem, asking whether fewer than d states can ach...

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