نتایج جستجو برای: sic سینتر شده

تعداد نتایج: 480616  

2009
TAWFIG ELTAIF HOSSAM M. H. SHALABY SAHBUDIN SHAARI MOHAMMAD M. N. HAMARSHEH

Performance of optical code division multiple access (O-CDMA) system is influenced by multiple access interference (MAI) resulted from the overlapping between the users. To overcome this problem, successive interference cancellation (SIC) scheme is applied to O-CDMA systems. In this paper we apply successive interference cancellation technique to a spectral amplitude coding (SAC) system that us...

2012
Valdas Jokubavicius Justinas Palisaitis Remigijus Vasiliauskas Rositsa Yakimova Mikael Syväjärvi Rositza Yakimova

Different sublimation growth conditions of 3C-SiC approaching a bulk process have been investigated with the focus on appearance of macrodefects. The growth rate of 3C-SiC crystals grown on 6H-SiC varied from 380 to 460 μm/h with the thickness of the crystals from 190 to 230 μm, respectively. The formation of macrodefects with void character was revealed at the early stage of 3C-SiC crystal gro...

2010
C. Locke G. Kravchenko P. Waters J. D. Reddy K. Du A. A. Volinsky C. L. Frewin S. E. Saddow

Single crystal 3C-SiC films were grown on (100) and (111) Si substrate orientations in order to study the resulting mechanical properties of this material. In addition, poly-crystalline 3CSiC was also grown on (100)Si so that a comparison with monocrystaline 3C-SiC, also grown on (100)Si, could be made. The mechanical properties of single crystal and polycrystalline 3C-SiC films grown on Si sub...

2016
Yang Guo Xiujun Wang Xianglan Li Jiaping Wang Minggang Xu Dongwei Li

Soil inorganic carbon (SIC) and organic carbon (SOC) are important carbon reservoirs in terrestrial ecosystems. However, little attention was paid to SIC dynamics in cropland. We conducted a survey in the upper Yellow River Delta of North China Plain. We collected 155 soil samples from 31 profiles, and measured SOC, SIC and soluble Ca2+ and Mg2+ contents. Our results showed that mean SOC conten...

1997
C. W. Liu J. C. Sturm

The growth properties of b-SiC on ~100! Si grown by rapid thermal chemical vapor deposition, using a single precursor ~methylsilane! without an initial surface carbonization step, were investigated. An optimun growth temperature at 800 °C was found to grow single crystalline materials. A simple Al Schottky barrier fabricated on n-type SiC grown on Si substrates exhibited a ‘‘hard’’ reverse brea...

2017
Jaechan Park Hyojin Park

The doctrine of informed consent, as opposed to medical paternalism, is intended to facilitate patient autonomy by allowing patient participation in the medical decision-making process. However, regrettably, the surgical informed consent (SIC) process is invariably underestimated and reduced to a documentary procedure to protect physicians from legal liability. Moreover, residents are rarely tr...

Journal: :Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada 2013
Tea Toplišek Medeja Gec Aljaž Iveković Saša Novak Spomenka Kobe Goran Dražić

In this work, the interactions between tungsten (W) and silicon carbide (SiC) in Sigma SiC fibers at high temperatures were characterized using scanning and transmission electron microscopy. These fibers could have the potential for use in fusion-related applications owing to their high thermal conductivity compared with pure SiC-based fibers. The as-received fibers were composed of a 100-μm-th...

ژورنال: بهداشت و توسعه 2016
اسکندری‌زاده, علی, ترابی, ملوک, نیکیان, فرید, کریمی افشار, مرضیه,

مقدمه: (significant caries index)SiC یکی از شاخص‌های معرفی شده توسط سازمان بهداشت جهانی برای بررسی وضعیت پوسیدگی در جوامع گوناگون است و یک سوم افرادی که بالاترین DMFT/dmft (دندان پوسیده شده/کشیده شده و ترمیم شده) را دارند مورد بررسی قرار می‌دهد. هدف از انجام این مطالعه تعیین میزان شاخص (SiC) و dmft در کودکان 6 ساله شهر کرمان بوده است. روش‌ها: این مطالعه مقطعی روی 300 کودک 6 ساله شهر کرمان که به...

ژورنال: مواد نوین 2014
حمید رضا بهاروندی مینا سعیدی حیدری ناصر احسانی

    در این مقاله، سینتر بدون فشار نانوکامپوزیت B4C-Si مورد پژوهش قرار گرفته است. ابتدا، پیش از انجام هر گونه عملیات آزمایشگاهی و با استفاده از نرم افزارهای Factsage و HSC، مقدار تغییرات انرژی آزاد واکنش‌ها و در نتیجه، انجام پذیری آن‌ها مورد بررسی قرار گرفت. سپس ترکیب‏هایی حاوی 10-5/2 درصد وزنی سیلیسیم تحت فشار پرس تک محوره قرار گرفته و به روش سینتر بدون فشار در دمای 2200 درجه سانتی‏گراد سینتر ش...

2009
Hui Zhang Leon M. Tolbert

The potential impact of SiC devices on a wind generation system is explored by simulations in this work. The system modeling is explained in detail. Most recent SiC MOSFET prototypes are obtained, tested, and used to form a bi-directional converter in the simulation. The performance of the SiC converter is analyzed and compared to its Si counterpart at different temperatures and frequencies. A ...

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